Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 112; no. 2; pp. 160 - 164
• Main Authors: Teixeira, R.C., Doi, I., Zakia, M.B.P., Diniz, J.A., Swart, J.W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25-09-2004
• Subjects: Chemical vapor deposition; Polycrystalline silicon; Stress; Thin film; Polycrystalline silicon; Chemical vapor deposition; Stress; Thin film
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2004.05.025

In this paper the residual stress of polycrystalline silicon (poly-Si) grown at high temperature in a vertical LPCVD reactor has been studied using micro-Raman spectroscopy. The samples were prepared on Si(1
0
0) n-type substrates coated with 100
nm of SiO
2. The films were deposited in the temperature range of 750–900
°C at pressures of 5 and 10
Torr. The as-deposited poly-Si films are highly crystalline and show tensile stress. Micro-Raman measurements show that the residual stress is reduced as the deposition temperature is increased and, above 800
°C, tensile stress is reduced to less than 150
MPa. These results indicate that high quality, high crystalline and low strained poly-Si films can be obtained in this type of reactor using higher deposition temperature.