A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications

• Published in: IEEE transactions on circuits and systems. II, Express briefs Vol. 63; no. 6; pp. 533 - 537
• Main Authors: Kim, Kihyun, Ko, Jaeyong, Lee, Sungho, Nam, Sangwook
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-06-2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Broadband; Broadband amplifiers; Carrier frequencies; Channels; Circuits; CMOS; CMOS integrated circuits; CMOS power amplifier; Evolution; fully integration; Impedance; Linearity; Logic gates; LTE; Power amplifiers; transformer; wideband; transformer; wideband; long-term evolution (LTE); full integration; CMOS power amplifier (PA)
• ISSN: 1549-7747; 1558-3791
• DOI: 10.1109/TCSII.2016.2530418

This brief presents the implementation and measurement results of a CMOS broadband linear power amplifier (PA) for long-term evolution (LTE) applications. Interstage matching considering the main's source and the driver's load impedances is analyzed for broadband linear output power. The proposed PA is fabricated in standard 0.11-μm RF CMOS technology. The PA achieves linear output power of 27.9-27.3 dBm and power-added efficiency of 33%-26.1% under an adjacent channel power ratio (ACLR E-UTRA ) of -30 dBc for an LTE 16-QAM 10-MHz bandwidth signal with a carrier frequency range of 1.8-2.3 GHz.