The geometric mean density of states and its application to one-dimensional nonuniform systems

• Published in: The European physical journal. B, Condensed matter physics Vol. 80; no. 4; pp. 485 - 492
• Main Authors: Zhang, L., Gong, L. Y., Tong, P. Q.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer-Verlag 01-04-2011; EDP Sciences; Springer
• Subjects: Complex Systems; Condensed Matter Physics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Fluid- and Aerodynamics; Localization effects (anderson or weak localization); Physics; Physics and Astronomy; Solid State Physics; Specific gravity; Surface and interface electron states; Theories and models of many electron systems; Potential Model; Extended State; Localization Property; Anderson Model; Average Ratio; Localized states; Tight binding approximation; Electronic density of states; Model potential; Disorder; One-dimensional systems; Calculation methods
• ISSN: 1434-6028; 1434-6036
• DOI: 10.1140/epjb/e2011-20062-9

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By using the measure of the ratio
R
of the geometric mean of the local density of states (LDOS) and the arithmetic mean of LDOS, the localization properties can be efficiently characterized in one-dimensional nonuniform single-electron and two-interacting-particle (TIP) systems. For single-electron systems, the extended and localized states can be distinguished by the ratio
R
. There are sharp transitions in the ratio
R
at mobility edges. For TIP systems, the localization properties of particle states can also be reflected by the ratio
R
. These results are in accordance with what obtained by other methods. Therefore, the ratio
R
is a suitable quantity to characterize the localization properties of particle states for these 1D nonuniform systems.