Performance of silicon cold cathodes

• Published in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 4; no. 1; pp. 108 - 111
• Main Authors: van Gorkom, G. G. P., Hoeberechts, A. M. E.
• Format: Journal Article
• Language: English
• Published: 01-01-1986
• Subjects: P−N JUNCTIONS; MIGRATION; CATHODES; SORPTIVE PROPERTIES; PERFORMANCE; HOT ELECTRONS; STABILITY; SILICON; CURRENT DENSITY; ELECTRON TEMPERATURE; ATOM TRANSPORT; ADSORPTION; COLD CATHODE TUBES; DESORPTION; Si; CESIUM; BRIGHTNESS; FIELD EMISSION
• ISSN: 0734-211X; 1520-8567; 2327-9877
• DOI: 10.1116/1.583357

The emission properties of cesiated silicon cold cathodes are described and the factors which ultimately limit the performance of such cathodes are discussed. It is tentatively concluded that the maximum available current density and brightness are limited by cesium migration and desorption, these maximum values (for emitters with 1 μm diam and with an efficiency of 1.5%) being j
vac,max≂1500 A/cm2 and B
max≂9×106 A/cm2 sr (at V=10 kV). The long term stability of the emission is surprisingly good, in spite of adsorption of oxidizing gases from the vacuum. This indicates that there is a desorption of such gases too, probably due to the outgoing electrons at high current densities.