Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

• Published in: Physica status solidi. A, Applications and materials science Vol. 208; no. 5; pp. 1191 - 1194
• Main Authors: Isobe, Yasuhiro, Iida, Daisuke, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi, Imade, Mamoru, Kitaoka, Yasuo, Mori, Yusuke
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-05-2011; WILEY‐VCH Verlag
• Subjects: GaN; growth; LPE-GaN substrate; miscut; MOVPE; nonpolar
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201001019

We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m‐plane free‐standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE‐GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut‐angle LPE‐GaN substrate shows large step bunching, small‐miscut‐angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface.