Ni-doped GST materials for high speed phase change memory applications

• Published in: Materials research bulletin Vol. 64; pp. 333 - 336
• Main Authors: Zhu, Yueqin, Zhang, Zhonghua, Song, Sannian, Xie, Huaqing, Song, Zhitang, Li, Xiaoyun, Shen, Lanlan, Li, Le, Wu, Liangcai, Liu, Bo
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-04-2015
• Subjects: A. Amorphous materials; B. Sputtering; C. Transmission electron microscopy (TEM); C. X-ray diffraction; D. Electrical properties; C. Transmission electron microscopy (TEM); A. Amorphous materials; B. Sputtering; C. X-ray diffraction; D. Electrical properties
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2015.01.016

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•Phase change materials of Ni doped GST were made by magnetron co-sputtering.•The optimal component of Ni doped GST was Ni0.3Ge2.8Sb2.2Te4.7.•Ni0.3Ge2.8Sb2.2Te4.7 shows a better data retention ability (∼135°C for 10 years).•The phase change speed can be realized as short as 6ns.•Ni0.3Ge2.8Sb2.2Te4.7 based cell shows endurance up to 1.5×104 SET–RESET cycles.
In this paper, Ni-doped Ge2Sb2Te5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni0.3Ge2.8Sb2.2Te4.7 film exhibits a higher crystallization temperature (∼217°C) and a better data retention ability (∼135°C for 10 years). A reversible switching between set and reset can be realized by an electric pulse as short as 6-ns for Ni0.3Ge2.8Sb2.2Te4.7 based phase change memory. Furthermore, Ni0.3Ge2.8Sb2.2Te4.7 based cell shows good endurance up to 1.5×104 SET–RESET cycles during endurance test.