Hot-Carrier Instability of nMOSFETs Under Pseudorandom Bit Sequence Stress

• Published in: IEEE electron device letters Vol. 37; no. 4; pp. 366 - 368
• Main Authors: Kim, Yonghun, Kang, Soo Cheol, Lee, Sang Kyung, Jung, Ukjin, Kim, Seung Mo, Lee, Byoung Hun
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-04-2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Charge; Degradation; Devices; eye diagram; hot carrier degradation; Hot carriers; Human computer interaction; Instability; lifetime prediction; Logic gates; low-frequency noise; Pseudorandom; pseudorandom bit sequence (PRBS); Random timing jitter; Stability; Stress; Stresses; Timing jitter; Trapping; Random timing jitter; hot carrier degradation; lifetime prediction; eye diagram; pseudorandom bit sequence (PRBS); low-frequency noise
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2016.2533568

Hot-carrier instability under stress conditions emulating a random logic operation (random ON and OFF) has been investigated using pseudorandom bit sequence (PRBS) stress patterns. Furthermore, the impacts of PRBS stress on circuit-level operation have been compared with the conventional dc (static) and ac (periodic) stress conditions using hot-carrier-induced random timing jitter. It was observed that the recovery achieved by charge trapping and detrapping under dynamic stress conditions significantly affects the degree of hot-carrier degradation.