Tunneling conductance of the graphene SNS junction with a single localized defect

• Published in: Journal of experimental and theoretical physics Vol. 110; no. 4; pp. 613 - 617
• Main Authors: Bolmatov, D., Mou, Chung-Yu
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-04-2010; Springer
• Subjects: BOUND STATE; CARBON; Classical and Quantum Gravitation; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFERENTIAL EQUATIONS; DIRAC EQUATION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRODES; Electronic Properties of Solid; ELECTRONS; ELEMENTARY PARTICLES; ELEMENTS; EQUATIONS; FERMIONS; FIELD EQUATIONS; Graphene; GRAPHITE; LEPTONS; MATERIALS; MINERALS; NONMETALS; PARTIAL DIFFERENTIAL EQUATIONS; Particle and Nuclear Physics; PHYSICAL PROPERTIES; Physics; Physics and Astronomy; Quantum Field Theory; Relativity Theory; Solid State Physics; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTORS; TUNNEL EFFECT; WAVE EQUATIONS; Andreev Reflection; Quasi Particle; Tunneling Conductance; Graphene Ribbon; Graphene Strip
• ISSN: 1063-7761; 1090-6509
• DOI: 10.1134/S1063776110040084

Using the Dirac-Bogoliubov-de Gennes equation, we study the electron transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit
l
def
≪
L
≪ ξ. We find that the spectrum of Andreev bound states is modified in the presence of a single localized defect in the bulk. The minimum tunneling conductance remains the same, and this result is independent of the actual location of the imperfection.