Effect of the parameters of pulsed anodic formation of porous silicon on its luminescent, paramagnetic, and electrotransport properties

• Published in: Physics of the solid state Vol. 59; no. 2; pp. 251 - 253
• Main Authors: Demidov, E. S., Abrosimov, A. S., Demidova, N. E., Karzanov, V. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-02-2017; Springer; Springer Nature B.V
• Subjects: Photoluminescence; Physics; Physics and Astronomy; Porous materials; Porous silicon; Pulse modulation; Semiconductors; Silicon; Solid State Physics
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783417020044

We present the data on changes in the properties of porous silicon formed at the current pulse modulation in the range of 0.1–1 Hz with the aim to modulate the properties of porous silicon in a nanoscale range. It is demonstrated that the use of the pulsed mode of formation of porous silicon with a period of a few tenths of a second can dramatically affect the photoluminescence quantum yield and other properties of the material. There is a correlation of the luminescent, electrotransport, and paramagnetic properties of porous silicon formed under different modes.