Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods

Transition metal dichalcogenides such as WS2 show exciting promise in electronic and optoelectronic applications. Significant variations in the transport, Raman, and photoluminescence (PL) can be found in the literature, yet it is rarely addressed why this is. In this report, Raman and PL of monolay...

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Bibliographic Details
Published in:Journal of materials research Vol. 31; no. 7; pp. 931 - 944
Main Authors: McCreary, Amber, Berkdemir, Ayse, Wang, Junjie, Nguyen, Minh An, Elías, Ana Laura, Perea-López, Néstor, Fujisawa, Kazunori, Kabius, Bernd, Carozo, Victor, Cullen, David A., Mallouk, Thomas E., Zhu, J., Terrones, Mauricio
Format: Journal Article
Language:English
Published: New York, USA Cambridge University Press 14-04-2016
Springer International Publishing
Springer Nature B.V
Materials Research Society
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Summary:Transition metal dichalcogenides such as WS2 show exciting promise in electronic and optoelectronic applications. Significant variations in the transport, Raman, and photoluminescence (PL) can be found in the literature, yet it is rarely addressed why this is. In this report, Raman and PL of monolayered WS2 produced via different methods are studied and distinct features that indicate the degree of crystallinity of the material are observed. While the intensity of the LA(M) Raman mode is found to be a useful indicator to assess the crystallinity, PL is drastically more sensitive to the quality of the material than Raman spectroscopy. We also show that even exfoliated crystals, which are usually regarded as the most pristine material, can contain large amounts of defects that would not be apparent without Raman and PL measurements. These findings can be applied to the understanding of other two-dimensional heterostructured systems.
Bibliography:USDOE Office of Science (SC)
National Science Foundation (NSF)
AC05-00OR22725; W911NF-11-1-0362; DMR-0820404; EFRI-1433311
US Army Research Office (ARO)
Pennsylvania State Univ.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2016.47