Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots

• Published in: AIP advances Vol. 13; no. 2; pp. 025139 - 025139-7
• Main Authors: Wang, Jeffrey Gan, Ma, Ruihua, Wu, Xing, Leng, Kangmin, Wang, Qisheng
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-02-2023; AIP Publishing LLC
• Subjects: CMOS; Infrared detectors; Luminescence; Nanoparticles; Photoluminescence; Quantum dots; Quenching; Temperature effects
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/5.0137649

The detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost, simplify the operation, and improve the pixel of the conventional infrared detection technology. To achieve this objective, the infrared light is converted into visible light via up-conversion nanoparticles or LED, which, however, suffers from complicated device fabrication. Herein, we report a type of simple infrared detection via a CMOS detector based on quantum dots (QDs). Inspired by the temperature effect of luminescence QDs, we design a setup that modulates the luminescence intensity of QDs via infrared radiation, which can be read out through a CMOS camera. Furthermore, the underlying mechanism of thermal quenching behavior is investigated through measurements of transient photoluminescence. Compared with traditional IR detectors, our infrared detection system possesses the advantages of facile fabrication and scalability, showing great potential for infrared detection.