Magnetotransport in high mobility epitaxial graphene

• Published in: Physica status solidi. A, Applications and materials science Vol. 204; no. 6; pp. 1746 - 1750
• Main Authors: Berger, Claire, Song, Zhimin, Li, Xuebin, Wu, Xiaosong, Brown, Nate, Maud, Duncan, Naud, Cécile, de Heer, Walt A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-06-2007; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 73.20.−r; 73.23.−b; 73.43.Qt; 73.50.−h; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Physics; Interfaces; Epitaxial layers; Charge carriers; Lithography; Graphene; Coherence; Oscillations; Transport processes; Two-dimensional electron gas; Magnetoresistance; Shubnikov-de Haas effect
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200675352

Epitaxial graphene layers grown on single‐crystal SiC have large structural coherence domains and can be easily patterned into submicron structures using standard microelectronics lithography techniques. Patterned structures show two‐dimensional electron gas properties with mobilities exceeding 3 m2/Vs. Magnetotransport measurements (Shubnikov–de Haas oscillations) indicate that the transport properties are dominated by the highly doped graphene layer at the silicon carbide interface. They reveal the Dirac nature of the charge carriers as predicted for a single graphene layer. The properties of Dirac fermions can be conveniently explored in epitaxial graphene with long electronic phase coherence at the micron scale. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)