Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs

The thermally stimulated excitation of radiative modes of surface plasmon–phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation selective emission is studied and experimentally observed. The selective high-power THz radiation emitters in the 7–8 and 10–15 THz frequency range...

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Bibliographic Details
Published in:	Applied physics. A, Materials science & processing Vol. 115; no. 1; pp. 199 - 202
Main Authors:	Sirmulis, E, Silenas, A, Pozela, K, Pozela, J, Juciene, V
Format:	Journal Article
Language:	English
Published:	Berlin/Heidelberg Springer Berlin Heidelberg 01-04-2014
Subjects:	Characterization and Evaluation of Materials Condensed Matter Physics Emission analysis Emitters Excitation Frequency ranges Gallium arsenide Gallium arsenides Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Polaritons Processes Surfaces and Interfaces Thin Films Couple Plasmon Longitudinal Optical Phonon Phonon Oscillation GaAs Sample GaAs
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Summary:	The thermally stimulated excitation of radiative modes of surface plasmon–phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation selective emission is studied and experimentally observed. The selective high-power THz radiation emitters in the 7–8 and 10–15 THz frequency ranges based on the heated highly doped ( n >5⋅10 17 cm −3 ) GaAs plates are proposed.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-013-7931-9