High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

From annealing experiments performed on both irradiated SiO 2 -Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed to possibly act as latent defects.

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 55; no. 6; pp. 2970 - 2974
Main Authors:	Marinoni, M., Touboul, A.D., Zander, D., Petit, C., Wrobel, F., Carvalho, A.M.J.F., Arinero, R., Ramonda, M., Saigne, F., Weulersse, C., Buard, N., Carriere, T., Lorfevre, E.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-12-2008 The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Institute of Electrical and Electronics Engineers
Subjects:	Annealing Atomic force microscopy Defect annealing Defects Electric breakdown Electron traps Electronics Energy exchange Engineering Sciences Force control Heavy ion Interface states Ionizing radiation Irradiation isochronal annealing latent defects Leakage current MOS devices Oxides reliability Silicon dioxide SiO _{2} structural modifications
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Description
Summary:	From annealing experiments performed on both irradiated SiO 2 -Si structures and MOS devices, swift heavy ions-induced morphological oxide defects are proposed to possibly act as latent defects.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2008.2006489