Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

• Published in: AIP advances Vol. 5; no. 10; pp. 107134 - 107134-8
• Main Authors: Wang, Zujun, Chen, Wei, He, Baoping, Yao, Zhibin, Xiao, Zhigang, Sheng, Jiangkun, Liu, Minbo
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-10-2015; AIP Publishing LLC
• Subjects: ANNEALING; CHARGE-COUPLED DEVICES; COBALT 60; COMPARATIVE EVALUATIONS; Degradation; Dosage; DOSE RATES; ELECTRIC POTENTIAL; GAMMA RADIATION; Gamma rays; IRRADIATION; MATERIALS SCIENCE; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; Saturation; TIME DEPENDENCE
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4934931

The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The VS degradation levels depend on the dose rates. The VS degradation mechanism induced by dose rate and annealing effects is analyzed. The VS at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during 60Co γ radiation. The VS degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.