How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties

We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less tha...

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Bibliographic Details
Published in:	Applied physics letters Vol. 104; no. 5
Main Authors:	Zhang, Lei, Lee, Leung-Kway, Teng, Chu-Hsiang, Hill, Tyler A., Ku, Pei-Cheng, Deng, Hui
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 03-02-2014
Subjects:	Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Decay rate Density DIELECTRIC MATERIALS ENERGY-LEVEL DENSITY GALLIUM NITRIDES INDIUM COMPOUNDS Micrometers NANOSCIENCE AND NANOTECHNOLOGY OPTICAL PROPERTIES OSCILLATOR STRENGTHS PHOTONS QUANTUM DOTS Quantum wells RELAXATION Strain relaxation STRAINS
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Summary:	We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100 nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong reduction of the local density of photon states in small nanodisks. Further increase in the radiative decay rate can be achieved by engineering the local density of photon states, such as adding a dielectric coating.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4864083