Intra-excitonic relaxation dynamics in ZnO

Intra-excitonic relaxation dynamics in ZnO

The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n=1) to (n=2) relaxation is c...

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Bibliographic Details
Published in:Applied physics letters Vol. 99; no. 23; pp. 231910 - 231910-3
Main Authors: Chernikov, Alexej, Koch, Martin, Laumer, Bernhard, Wassner, Thomas A., Eickhoff, Martin, Koch, Stephan W., Chatterjee, Sangam
Format: Journal Article
Language:English
Published: American Institute of Physics 05-12-2011
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Summary:The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n=1) to (n=2) relaxation is clearly identified at low excitation densities and lattice temperatures with a characteristic time constant of 6±0.5 ps.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3668102