Nanometer-scale current-voltage spectra measurement of resonant tunneling diodes using scanning force microscopy

• Published in: Japanese Journal of Applied Physics Vol. 35; no. 2B; pp. 1154 - 1158
• Main Authors: TANIMOTO, M, KANISAWA, K, SHINOHARA, M
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1996
• Subjects: Applied sciences; Diodes; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ternary compound; Resonant tunnel effect; Gallium Arsenides; Fine structure; Aluminium Arsenides; Negative differential conductivity; Point contact; Voltage current curve; Tunnel diode; Contact resistance; Measurement method; III-V compound
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.35.1154

We demonstrate that a novel method of current-voltage (
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) spectra measurement by scanning force microscopy (SFM) reveals local electrical characteristics of resonant tunneling diodes (RTDs) on a nanometer scale. Measured SFM
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spectra of RTDs show negative differential resistance features, and the spatial resolution of this method was found to be 20 nm. Experimental evidence for the quantized nature of an SFM pointcontact was observed for the first time. High spatial resolution of this method was confirmed by a simple calculation for the area of current flow through RTD. Fine structure in the SFM
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spectra was also observed.