Analysis of P and Sb diffusion during thermal oxidation in silicon

• Published in: Japanese Journal of Applied Physics Vol. 33; no. 6A; pp. 3362 - 3367
• Main Authors: OKINO, T, ONISHI, M
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1994
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion in solids; Diffusion of other defects; Exact sciences and technology; Physics; Theory of diffusion and ionic conduction in solids; Transport properties of condensed matter (nonelectronic); Vacancies; Semiconductor materials; Differential equations; Interstitials; Theoretical study; Antimony additions; Oxidation; Silicon; Phosphorus additions; Diffusion
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.33.3362

Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies (
I
and
V
). An extended relation of the local equilibrium between
I
and
V
,
V
I
m
=
n
, is derived from asymptotic forms of formal solutions of OED and ORD equations. The differential equations are solved using
V
I
m
=
n
, i.e., OED and ORD equations are simultaneously solved without any assumptions. Consequently, OED/ORD were governed by only the interstitialcy/vacancy mechanism. The local equilibrium between
I
and
V
did not occur in the present diffusion time range. From the obtained results, diffusivities of
I
and
V
, i.e.,
D
I
=2.4×10
-9
cm
2
s
-1
and
D
V
=2.1×10
-10
cm
2
s
-1
, and also their thermal equilibrium concentrations,
C
I
0
=3.3×10
16
cm
-3
and
C
V
0
=2.2×10
17
cm
-3
, were determined at 1100°C.