Multicarrier transport in epitaxial multilayer graphene

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements i...

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Bibliographic Details
Published in:	Applied physics letters Vol. 97; no. 11; pp. 112107 - 112107-3
Main Authors:	Lin, Yu-Ming, Dimitrakopoulos, Christos, Farmer, Damon B., Han, Shu-Jen, Wu, Yanqing, Zhu, Wenjuan, Gaskill, D. Kurt, Tedesco, Joseph L., Myers-Ward, Rachael L., Eddy, Charles R., Grill, Alfred, Avouris, Phaedon
Format:	Journal Article
Language:	English
Published:	American Institute of Physics 13-09-2010
Online Access:	Get full text
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Summary:	Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multilayer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.3485671