Spatial modes of a concentric-circle-grating surface-emitting, AlGaAs/GaAs quantum well semiconductor laser

We demonstrate the fabrication and operation of an AlGaAs surface-emitting semiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly symmetric grating of period Λ=0.25 μm fabricated using electron-beam lithography. Azimuthal variations in the grating linewidth have a signi...

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Bibliographic Details
Published in:	Applied physics letters Vol. 60; no. 15; pp. 1773 - 1775
Main Authors:	ERDOGAN, T, KING, O, WICKS, G. W, HALL, D. G, DENNIS, C. L, ROOKS, M. J
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 13-04-1992
Subjects:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers; laser diodes Gallium Arsenides Diffraction grating Quantum well Surface emitting laser Aluminium Gallium Arsenides Mixed Circular configuration Semiconductor laser
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Summary:	We demonstrate the fabrication and operation of an AlGaAs surface-emitting semiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly symmetric grating of period Λ=0.25 μm fabricated using electron-beam lithography. Azimuthal variations in the grating linewidth have a significant impact on the spatial modes of the laser.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.107211