Boron nitride substrates for high mobility chemical vapor deposited graphene

• Published in: Applied physics letters Vol. 98; no. 24; pp. 242105 - 242105-3
• Main Authors: Gannett, W., Regan, W., Watanabe, K., Taniguchi, T., Crommie, M. F., Zettl, A.
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 13-06-2011
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.3599708

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as
37
000

cm
2
/
V
s
, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.