Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a mod...

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Bibliographic Details
Published in:	Scripta materialia Vol. 150; pp. 148 - 151
Main Authors:	Mu, Fengwen, He, Ran, Suga, Tadatomo
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-06-2018
Subjects:	Bonding GaN-on-diamond High power devices Interface Room temperature GaN-on-diamond Bonding Room temperature Interface High power devices
Online Access:	Get full text
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Summary:	Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure. [Display omitted]
ISSN:	1359-6462 1872-8456
DOI:	10.1016/j.scriptamat.2018.03.016