Growth Modes of GaN Plasma-Assisted MBE Nanowires

Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and ab...

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 52; no. 16; pp. 2085 - 2087
Main Authors:	Berdnikov, Yu. S., Sibirev, N. V.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-12-2018 Springer Springer Nature B.V
Subjects:	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY ACTIVATION ENERGY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH Epitaxy EXPERIMENTAL DATA GALLIUM NITRIDES LAYERS Liquor Magnetic Materials Magnetism Mathematical analysis MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOWIRES Novels NUCLEATION Physics Physics and Astronomy PLASMA SILICON Silicon substrates SUBSTRATES
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Summary:	Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and absence of growth. We extract the activation energy for nucleation of GaN nanowires on the Si(111) from the model fitting to experimental data.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782618160042