Wafer bonding for microsystems technologies

In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will intr...

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Bibliographic Details
Published in:Sensors and actuators. A, Physical Vol. 74; no. 1; pp. 161 - 168
Main Authors: Gösele, U., Tong, Q.-Y., Schumacher, A., Kräuter, G., Reiche, M., Plößl, A., Kopperschmidt, P., Lee, T.-H., Kim, W.-J.
Format: Journal Article Conference Proceeding
Language:English
Published: Lausanne Elsevier B.V 20-04-1999
Elsevier Science
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Summary:In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.
ISSN:0924-4247
1873-3069
DOI:10.1016/S0924-4247(98)00310-0