Characterization, design, modeling, and model validation of silicon-wafer M:N balun components under matched and unmatched conditions

• Published in: IEEE journal of solid-state circuits Vol. 41; no. 5; pp. 1201 - 1209
• Main Authors: Rotella, M., Cismaru, C., Tkachenko, Y., Yuhua Cheng, Zampardi, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-05-2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Baluns; Circuit properties; Circuits; Data mining; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Grounds; Impedance; Impedance matching; Inductors; Integrated circuits; Magnetic devices; Matching; monolithic transformers and inductors; radio frequency integrated circuit design; Radiofrequency integrated circuits; Scattering parameters; semiconductor device modeling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Shields; Signal convertors; Silicon; Skin effect; Solid modeling; Substrates; Transformers; Scalability; Baluns; Characteristic impedance; Lumped parameter circuit; Transfer characteristic; Integrated circuit design; Balun; Radiofrequency; Inductor; Skin effect; Modeling; Semiconductor device; silicon; s parameter; semiconductor device modeling; n type semiconductor; Radiofrequency integrated circuits; monolithic transformers and inductors; Signal converter; radio frequency integrated circuit design; Monolithic integrated circuit; Wafer
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2006.872736

In this paper, we characterize and model M:N baluns for silicon RFIC design. A modeling methodology is presented based on a geometrically scalable lumped-element approach that incorporates both skin effect and substrate loss. This approach is extended to include the effects of a patterned ground shield under the balun. The modeling approach is validated with measured S-parameters and extracted impedances from various circuit configurations. The impedance transfer characteristics of the model and balun over substrate and over a patterned ground shield are explored. Matching considerations are addressed by evaluating the model accuracy with measured data under matched and unmatched conditions.