Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 50; no. 10; pp. 1333 - 1337
• Main Authors: Bagraev, N. T., Chernev, A. L., Klyachkin, L. E., Malyarenko, A. M., Emel’yanov, A. K., Dubina, M. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-10-2016; Springer; Springer Nature B.V
• Subjects: BORON; CAPACITANCE; Current voltage characteristics; Dielectric materials; DIELECTRIC PROPERTIES; DNA; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; Electrical conductivity; Genetic research; Low-Dimensional Systems; Magnetic Materials; Magnetism; MATERIALS SCIENCE; Multiferroic materials; OLIGONUCLEOTIDES; ORGANIC POLYMERS; Physics; Physics and Astronomy; Quantum Phenomena; QUANTUM WELLS; SCANNING TUNNELING MICROSCOPY; Semiconductor Structures; SILICON; SURFACES; TUNNEL EFFECT
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782616100079

Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.