Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System

Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System

The results of studying dielectric relaxation processes in the Ge 28.5 Pb 15 S 56.5 glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural p...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 52; no. 8; pp. 1043 - 1046
Main Authors: Castro, R. A., Anisimova, N. I., Kononov, A. A.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 01-08-2018
Springer Nature B.V
Subjects:
Amorphous
Dielectric relaxation
Dipole moments
Magnetic Materials
Magnetism
Molecular chains
Organic Semiconductors
Physics
Physics and Astronomy
Relaxation time
Relaxors
Thin films
Vitreous
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Summary:The results of studying dielectric relaxation processes in the Ge 28.5 Pb 15 S 56.5 glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy E p = 0.40 eV and the molecular dipole moment μ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as D + and D – .
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618080092