Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs
Final chip passivation layers are shown to have a major impact on the total dose hardness of bipolar linear technologies. It is found that devices fabricated without passivation layers do not exhibit enhanced low-dose-rate sensitivity (ELDRS) or pre-irradiation elevated-temperature stress (PETS) sen...
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| Published in: | IEEE transactions on nuclear science Vol. 49; no. 6; pp. 3171 - 3179 |
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| Main Authors: | , , , , , , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
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01-12-2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | Final chip passivation layers are shown to have a major impact on the total dose hardness of bipolar linear technologies. It is found that devices fabricated without passivation layers do not exhibit enhanced low-dose-rate sensitivity (ELDRS) or pre-irradiation elevated-temperature stress (PETS) sensitivity, whereas devices from the same production lot fabricated with either oxide/nitride or doped-glass passivation layers are ELDRS and PETS sensitive. In addition, removing the passivation layers after fabrication can mitigate ELDRS and PETS effects. ELDRS and PETS effects do not appear to be inherently related to circuit design or layout, but are related to mechanical stress effects, hydrogen in the device, or a combination of the two. These results suggest that proper engineering of the final chip passivation layer might eliminate ELDRS and PETS effects in bipolar integrated circuits. |
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| AbstractList | Final chip passivation layers are shown to have a major impact on the total dose hardness of bipolar linear technologies. It is found that devices fabricated without passivation layers do not exhibit enhanced low-dose-rate sensitivity (ELDRS) or pre-irradiation elevated-temperature stress (PETS) sensitivity, whereas devices from the same production lot fabricated with either oxide/nitride or doped-glass passivation layers are ELDRS and PETS sensitive. In addition, removing the passivation layers after fabrication can mitigate ELDRS and PETS effects. ELDRS and PETS effects do not appear to be inherently related to circuit design or layout, but are related to mechanical stress effects, hydrogen in the device, or a combination of the two. These results suggest that proper engineering of the final chip passivation layer might eliminate ELDRS and PETS effects in bipolar integrated circuits. (Author) Final chip passivation layers are shown to have a major impact on the total dose hardness of bipolar linear technologies. It is found that devices fabricated without passivation layers do not exhibit enhanced low-dose-rate sensitivity (ELDRS) or pre-irradiation elevated-temperature stress (PETS) sensitivity, whereas devices from the same production lot fabricated with either oxide/nitride or doped-glass passivation layers are ELDRS and PETS sensitive. In addition, removing the passivation layers after fabrication can mitigate ELDRS and PETS effects. ELDRS and PETS effects do not appear to be inherently related to circuit design or layout, but are related to mechanical stress effects, hydrogen in the device, or a combination of the two. These results suggest that proper engineering of the final chip passivation layer might eliminate ELDRS and PETS effects in bipolar integrated circuits. |
| Author | Riewe, L.C. Maher, M.C. Fleetwood, D.M. Reber, C.A. Witczak, S.C. Pease, R.L. Banks, J.C. Shaneyfelt, M.R. Schwank, J.R. Hjalmarson, H.P. Doyle, B.L. Hash, G.L. Dodd, P.E. Knapp, J.A. |
| Author_xml | – sequence: 1 givenname: M.R. surname: Shaneyfelt fullname: Shaneyfelt, M.R. email: shaneymr@sandia.gov organization: Sandia Nat. Labs., Albuquerque, NM, USA – sequence: 2 givenname: R.L. surname: Pease fullname: Pease, R.L. – sequence: 3 givenname: J.R. surname: Schwank fullname: Schwank, J.R. – sequence: 4 givenname: M.C. surname: Maher fullname: Maher, M.C. – sequence: 5 givenname: G.L. surname: Hash fullname: Hash, G.L. – sequence: 6 givenname: D.M. surname: Fleetwood fullname: Fleetwood, D.M. – sequence: 7 givenname: P.E. surname: Dodd fullname: Dodd, P.E. – sequence: 8 givenname: C.A. surname: Reber fullname: Reber, C.A. – sequence: 9 givenname: S.C. surname: Witczak fullname: Witczak, S.C. – sequence: 10 givenname: L.C. surname: Riewe fullname: Riewe, L.C. – sequence: 11 givenname: H.P. surname: Hjalmarson fullname: Hjalmarson, H.P. – sequence: 12 givenname: J.C. surname: Banks fullname: Banks, J.C. – sequence: 13 givenname: B.L. surname: Doyle fullname: Doyle, B.L. – sequence: 14 givenname: J.A. surname: Knapp fullname: Knapp, J.A. |
| BookMark | eNqFkU-LFDEQxYOs4Ozq2YOX4EG8ZDZ_Op30UYbVHVj04Hpu0t0VzNKTtKnMLvMt_MhmaEHwoKeXgt97ReVdkouYIhDyWvCtELy7vv_8dSs5l1vLtWr1M7IRWlsmtLEXZMO5sKxruu4FuUR8qGOjud6Qn_vD4sZCk6eLQwyProQU6exOkJHWF8TvLo4w0Tk9sSkhsOwKUISIoYTHUE7UxYkuGVjI2U1hDYAZahRMrMBhgWo55moqGRApeA9jQRoiHcKSZpfpHCJU2e_wJXnu3Yzw6rdekW8fb-53t-zuy6f97sMdG5UVhcFg-ejtZKTivtXQKjVM1uiqfpparaVvtGxAy0E1g7J6AN02UnlTP0K0Ql2Rd2vuktOPI2DpDwFHmGcXIR2xl7bhRuru_6CR3Nj2DL7_Jyi4Eopza8_L3_6FPqRjjvXevusqo5UxFbpeoTEnxAy-X3I4uHyqSf258r5W3p8r79fKq-PN6ggA8IcWqpE17xcAL6pe |
| CODEN | IETNAE |
| CitedBy_id | crossref_primary_10_1109_TNS_2009_2034154 crossref_primary_10_1109_TNS_2013_2244615 crossref_primary_10_1109_TNS_2003_820771 crossref_primary_10_1134_S1063739706030061 crossref_primary_10_1142_S0129156404002491 crossref_primary_10_1109_TNS_2011_2128885 crossref_primary_10_1109_TNS_2005_861080 crossref_primary_10_1109_TNS_2018_2837032 crossref_primary_10_1142_S012915640400248X crossref_primary_10_1016_j_microrel_2006_06_009 crossref_primary_10_1109_TNS_2021_3049846 crossref_primary_10_1109_TNS_2004_839200 crossref_primary_10_1109_TNS_2003_813130 crossref_primary_10_1088_1674_1056_ab75db crossref_primary_10_1109_TNS_2022_3147771 crossref_primary_10_1016_j_microrel_2020_113947 crossref_primary_10_1109_TNS_2008_2006478 crossref_primary_10_1109_TNS_2011_2116041 crossref_primary_10_1109_TNS_2005_855815 crossref_primary_10_1109_TNS_2017_2760629 crossref_primary_10_1109_TNS_2023_3323548 crossref_primary_10_1109_TNS_2003_812928 crossref_primary_10_1109_TNS_2011_2171364 crossref_primary_10_1007_s10854_024_12189_0 crossref_primary_10_1109_TNS_2022_3164327 crossref_primary_10_7498_aps_70_20210351 crossref_primary_10_1088_1674_1056_22_9_098501 crossref_primary_10_3389_fmats_2022_872837 crossref_primary_10_1109_TNS_2013_2259260 crossref_primary_10_1109_TNS_2007_907870 crossref_primary_10_1109_TNS_2015_2470665 crossref_primary_10_1109_TNS_2003_813133 crossref_primary_10_1109_TNS_2004_839258 crossref_primary_10_1109_TNS_2003_821803 crossref_primary_10_1109_TNS_2008_2000853 crossref_primary_10_1109_TNS_2008_2006485 crossref_primary_10_1109_TNS_2018_2887235 crossref_primary_10_1109_TNS_2008_2001268 crossref_primary_10_1109_TNS_2011_2171720 crossref_primary_10_1016_j_microrel_2019_113452 crossref_primary_10_1063_1_3669405 crossref_primary_10_1109_TNS_2002_805404 crossref_primary_10_1109_TNS_2009_2033797 crossref_primary_10_1109_TNS_2006_877851 crossref_primary_10_1109_TNS_2008_2011485 crossref_primary_10_1063_5_0146549 crossref_primary_10_1109_TNS_2004_839264 crossref_primary_10_1109_TNS_2021_3128835 crossref_primary_10_1109_TNS_2015_2452229 crossref_primary_10_1109_TNS_2003_820768 crossref_primary_10_1109_TNS_2008_2006972 crossref_primary_10_1109_TNS_2006_886219 crossref_primary_10_1109_TNS_2010_2086076 crossref_primary_10_1109_TNS_2007_892262 crossref_primary_10_1109_TNS_2018_2828142 crossref_primary_10_7498_aps_67_20172215 crossref_primary_10_1109_TNS_2006_877981 crossref_primary_10_1109_ACCESS_2017_2756701 crossref_primary_10_1016_j_mejo_2023_105764 |
| Cites_doi | 10.1109/IEDM.1980.189944 10.1109/IEDM.1981.190053 10.1109/23.556834 10.1016/S0026-2714(02)00019-7 10.1109/REDW.2001.960468 10.1109/23.658987 10.1109/TNS.1984.4333493 10.1109/23.819128 10.1109/23.819131 10.1149/1.2128790 10.1109/23.736509 10.1109/TNS.1979.4330293 10.1109/23.510726 10.1109/REDW.2000.896261 10.1109/23.45393 10.1016/0168-583X(90)90832-F 10.1109/23.983189 10.1116/1.588780 10.1109/23.124115 10.1109/23.819136 10.1109/TNS.1986.4334580 10.1109/TNS.1984.4333525 10.1063/1.93774 10.1109/23.903776 10.1109/23.556904 10.1109/TNS.2002.805346 10.1109/23.488756 10.1109/23.903805 10.1109/23.340519 10.1109/REDW.2001.960459 |
| ContentType | Journal Article |
| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002 |
| Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002 |
| DBID | RIA RIE AAYXX CITATION 7QF 7QL 7QQ 7SC 7SE 7SP 7SR 7T7 7TA 7TB 7U5 7U9 8BQ 8FD C1K F28 FR3 H8D H94 JG9 JQ2 KR7 L7M L~C L~D M7N P64 |
| DOI | 10.1109/TNS.2002.805365 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library Online CrossRef Aluminium Industry Abstracts Bacteriology Abstracts (Microbiology B) Ceramic Abstracts Computer and Information Systems Abstracts Corrosion Abstracts Electronics & Communications Abstracts Engineered Materials Abstracts Industrial and Applied Microbiology Abstracts (Microbiology A) Materials Business File Mechanical & Transportation Engineering Abstracts Solid State and Superconductivity Abstracts Virology and AIDS Abstracts METADEX Technology Research Database Environmental Sciences and Pollution Management ANTE: Abstracts in New Technology & Engineering Engineering Research Database Aerospace Database AIDS and Cancer Research Abstracts Materials Research Database ProQuest Computer Science Collection Civil Engineering Abstracts Advanced Technologies Database with Aerospace Computer and Information Systems Abstracts Academic Computer and Information Systems Abstracts Professional Algology Mycology and Protozoology Abstracts (Microbiology C) Biotechnology and BioEngineering Abstracts |
| DatabaseTitle | CrossRef Materials Research Database Technology Research Database Computer and Information Systems Abstracts – Academic Mechanical & Transportation Engineering Abstracts ProQuest Computer Science Collection Computer and Information Systems Abstracts Materials Business File Environmental Sciences and Pollution Management Aerospace Database Engineered Materials Abstracts Bacteriology Abstracts (Microbiology B) Algology Mycology and Protozoology Abstracts (Microbiology C) AIDS and Cancer Research Abstracts Industrial and Applied Microbiology Abstracts (Microbiology A) Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Civil Engineering Abstracts Aluminium Industry Abstracts Virology and AIDS Abstracts Electronics & Communications Abstracts Ceramic Abstracts METADEX Biotechnology and BioEngineering Abstracts Computer and Information Systems Abstracts Professional Solid State and Superconductivity Abstracts Engineering Research Database Corrosion Abstracts |
| DatabaseTitleList | Aerospace Database Solid State and Superconductivity Abstracts Technology Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: http://ieeexplore.ieee.org/Xplore/DynWel.jsp sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1558-1578 |
| EndPage | 3179 |
| ExternalDocumentID | 2630132461 10_1109_TNS_2002_805365 1134277 |
| Genre | orig-research |
| GroupedDBID | .DC .GJ 0R~ 29I 3O- 4.4 53G 5GY 5RE 5VS 6IK 8WZ 97E A6W AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK ACNCT ACPRK AENEX AETEA AETIX AFRAH AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RIG RNS TAE TN5 VH1 VOH XFK ZA5 AAYXX CITATION 7QF 7QL 7QQ 7SC 7SE 7SP 7SR 7T7 7TA 7TB 7U5 7U9 8BQ 8FD C1K F28 FR3 H8D H94 JG9 JQ2 KR7 L7M L~C L~D M7N P64 |
| ID | FETCH-LOGICAL-c381t-eb80cf8d7230f65e633bd875633fdd6552f4524e52b34b385be56423f70181613 |
| IEDL.DBID | RIE |
| ISSN | 0018-9499 |
| IngestDate | Sat Aug 17 02:26:40 EDT 2024 Fri Aug 16 07:50:49 EDT 2024 Fri Aug 16 21:40:10 EDT 2024 Thu Oct 10 16:53:26 EDT 2024 Thu Sep 26 16:03:26 EDT 2024 Wed Jun 26 19:26:55 EDT 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 6 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c381t-eb80cf8d7230f65e633bd875633fdd6552f4524e52b34b385be56423f70181613 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 993005377 |
| PQPubID | 23500 |
| PageCount | 9 |
| ParticipantIDs | proquest_miscellaneous_27207869 proquest_miscellaneous_28407259 ieee_primary_1134277 proquest_journals_993005377 proquest_miscellaneous_1031300881 crossref_primary_10_1109_TNS_2002_805365 |
| PublicationCentury | 2000 |
| PublicationDate | 2002-12-01 |
| PublicationDateYYYYMMDD | 2002-12-01 |
| PublicationDate_xml | – month: 12 year: 2002 text: 2002-12-01 day: 01 |
| PublicationDecade | 2000 |
| PublicationPlace | New York |
| PublicationPlace_xml | – name: New York |
| PublicationTitle | IEEE transactions on nuclear science |
| PublicationTitleAbbrev | TNS |
| PublicationYear | 2002 |
| Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| References | ref13 ref34 ref12 ref15 ref31 sabnis (ref21) 1981 ref11 ref32 ref10 ref2 ref1 ref17 ref16 ref19 van kessel (ref33) 1983 barbour (ref14) 1995 ref24 ref23 ref26 ref25 ref22 ref28 wu (ref30) 1992; 35 ref27 ref29 fair (ref18) 1980 ref8 ref7 ref9 ref4 ref3 ref6 ref5 sun (ref20) 1980 |
| References_xml | – start-page: 746 year: 1980 ident: ref18 article-title: threshold voltage instability in mosfet's due to channel hot hole emission publication-title: 1980 International Electron Devices Meeting doi: 10.1109/IEDM.1980.189944 contributor: fullname: fair – start-page: 244 year: 1981 ident: ref21 article-title: influence of encapsulation films on the properties of si/sio2interface of mos-structures when exposed to radiation publication-title: 1981 International Electron Devices Meeting doi: 10.1109/IEDM.1981.190053 contributor: fullname: sabnis – ident: ref16 doi: 10.1109/23.556834 – ident: ref17 doi: 10.1016/S0026-2714(02)00019-7 – ident: ref25 doi: 10.1109/REDW.2001.960468 – ident: ref11 doi: 10.1109/23.658987 – volume: 35 start-page: 65 year: 1992 ident: ref30 article-title: stress in psg and nitride films as related to film properties and annealing publication-title: Solid-State Technol contributor: fullname: wu – start-page: 83 year: 1995 ident: ref14 article-title: elastic recoil detection: erd publication-title: Handbook of Modern Ion Beam Materials Analysis contributor: fullname: barbour – ident: ref27 doi: 10.1109/TNS.1984.4333493 – ident: ref24 doi: 10.1109/23.819128 – ident: ref13 doi: 10.1109/23.819131 – ident: ref19 doi: 10.1149/1.2128790 – ident: ref6 doi: 10.1109/23.736509 – ident: ref31 doi: 10.1109/TNS.1979.4330293 – ident: ref9 doi: 10.1109/23.510726 – ident: ref22 doi: 10.1109/REDW.2000.896261 – ident: ref3 doi: 10.1109/23.45393 – ident: ref15 doi: 10.1016/0168-583X(90)90832-F – ident: ref12 doi: 10.1109/23.983189 – ident: ref29 doi: 10.1116/1.588780 – ident: ref4 doi: 10.1109/23.124115 – ident: ref34 doi: 10.1109/23.819136 – start-page: 237 year: 1983 ident: ref33 article-title: the quality of die-attachment and its relationship to stresses and vertical die-cracking publication-title: Proceedings 39th Electronic Components Conference contributor: fullname: van kessel – ident: ref28 doi: 10.1109/TNS.1986.4334580 – ident: ref2 doi: 10.1109/TNS.1984.4333525 – ident: ref26 doi: 10.1063/1.93774 – ident: ref8 doi: 10.1109/23.903776 – ident: ref7 doi: 10.1109/23.556904 – ident: ref23 doi: 10.1109/TNS.2002.805346 – ident: ref32 doi: 10.1109/23.488756 – ident: ref10 doi: 10.1109/23.903805 – ident: ref5 doi: 10.1109/23.340519 – ident: ref1 doi: 10.1109/REDW.2001.960459 – start-page: 244 year: 1980 ident: ref20 article-title: effects of silicon nitride encapsulation on mos device stability publication-title: Proc 28th IEEE Int Reliability Physics Symp contributor: fullname: sun |
| SSID | ssj0014505 |
| Score | 1.9997329 |
| Snippet | Final chip passivation layers are shown to have a major impact on the total dose hardness of bipolar linear technologies. It is found that devices fabricated... |
| SourceID | proquest crossref ieee |
| SourceType | Aggregation Database Publisher |
| StartPage | 3171 |
| SubjectTerms | Bipolar integrated circuits Chips Circuit design Circuit testing CMOS technology Devices Electronic equipment testing Guidelines Hardness Integrated circuit reliability Laboratories Oxides Passivation Pets Positron emission tomography Stresses Thermal stresses |
| Title | Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs |
| URI | https://ieeexplore.ieee.org/document/1134277 https://www.proquest.com/docview/993005377 https://search.proquest.com/docview/1031300881 https://search.proquest.com/docview/27207869 https://search.proquest.com/docview/28407259 |
| Volume | 49 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1La9wwEBbdnNpDkzQt3byqQA89VIkt63kMeZBcckkCvRnbGtGFYC_rLP0b_cmZkb2bQNtATxJoMMIjeWY8M9_H2NeoTB7zqhJWNo1QKnrho5WiNlJaWcQogbqRr27tzQ93fkEwOd_XvTAAkIrP4JimKZcfumZJv8pO8rxQ0toJm1jvhl6tdcZA6WxkK8ALjG78COOTZ_7k7uY21SIcOzxxZEVeWKBEqfLHdzgZl8vN_9vWFns_OpH8dND6NnsD7Qf27gW04A77fZ3aH3kX-Rz945HDjD9U5GJznEH7MyX_-UP3S4SuB0GgEbyngvaBUYJXbeBUJTJbLAjBID2A2tFRLgjCtBoBmfnQcMLH2hA-a3k9m1PMzMmJxeH6rP_I7i8v7s6uxMi-IBq04o8Capc10QXUWBaNBlMUdcDoBscYgtFaRqWlAi3rQtWF0zVoDGaKaAkDDL2ET2yj7Vr4zLgDabUMOVQmKAuNz3Qmq2BU8I2xvpqybyuNlPMBZKNMwUnmS1QeUWXKclDelO2QAp7Fhnc_ZXsrDZbjJexLdL0SXA2uHq1X8fZQSqRqoVv2JZFcoJBz-ZR9-YcMZaqtM_4VCUcwc9rv_n1ze-ztikMmy_fZxuNiCQds0oflYTrDT2ZT8kM |
| link.rule.ids | 315,782,786,798,27933,27934,54767 |
| linkProvider | IEEE |
| linkToHtml | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9QwEB7RcgAOvApiKVAjceCA28Tx84hKq11R9tJF4hYl8VhdqUpWm674G_xkPE52qcRD4mRLHkVWxs7MZGa-D-BdkDoPeVVxI5qGSxkcd8EIXmshjChCEEjdyNNLM_9mP50RTM6HXS8MIqbiMzymacrl-67Z0K-ykzwvpDBmD-4qabQZurV2OQOpspGvIF7h6MiPQD555k4W88tUjXBs45kjO3LLBiVSld--xMm8nD_6v409hoejG8k-Dnp_AnewfQoPboELHsCPWWqAZF1gq-ghjyxm7LoiJ5vFGbZXKf3Prrvv3Hc9coKNYD2VtA-cEqxqPaM6keV6TRgG6QHUkB7lPCdUqxGSmQ0tJ2ysDmHLltXLFUXNjNzYOMxO-2fw9fxscTrlI_8Cb6Idv-FY26wJ1kedZUEr1EVR-xjfxDF4r5USQSohUYm6kHVhVY0qhjNFMIQCFv2E57Dfdi2-AGZRGCV8jpX20mDjMpWJymvpXaONqybwfquRcjXAbJQpPMlcGZVHZJmiHJQ3gQNSwC-x4d1P4HCrwXK8hn0Zna8EWBNX3-5W4_2hpEjVYrfpS6K5iELW5hM4-osM5aqN1e4fEpaA5pR7-efNHcG96eLLRXkxm38-hPtbRpksfwX7N-sNvoa93m_epPP8E0Fk9ZQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Impact+of+passivation+layers+on+enhanced+low-dose-rate+sensitivity+and+pre-irradiation+elevated-temperature+stress+effects+in+bipolar+linear+ICs&rft.jtitle=IEEE+transactions+on+nuclear+science&rft.au=Shaneyfelt%2C+M.R.&rft.au=Pease%2C+R.L.&rft.au=Schwank%2C+J.R.&rft.au=Maher%2C+M.C.&rft.date=2002-12-01&rft.pub=IEEE&rft.issn=0018-9499&rft.eissn=1558-1578&rft.volume=49&rft.issue=6&rft.spage=3171&rft.epage=3179&rft_id=info:doi/10.1109%2FTNS.2002.805365&rft.externalDocID=1134277 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9499&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9499&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9499&client=summon |