Hydrogenated amorphous silicon thin-film transistor on plastic with an organic gate insulator

• Published in: IEEE electron device letters Vol. 25; no. 3; pp. 132 - 134
• Main Authors: Sung Hwan Won, Ji Ho Hur, Chang Bin Lee, Hyun Chul Nam, Chung, J.K., Jin Jang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-03-2004; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous silicon; Fabrication; Gates; Insulators; Leakage current; Plasma temperature; Plastic films; Plastic insulation; Semiconductor devices; Silicon compounds; Substrates; Thermal stresses; Thin film transistors; Threshold voltage; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2003.817368

We developed a high-performance, hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) on plastic substrate using an organic gate insulator. The TFT with a silicon-nitride (SiN/sub x/) gate insulator exhibited a field-effect mobility of 0.3 cm/sup 2//Vs and a threshold voltage of 5 V. On the other hand, an a-Si:H TFT with an organic gate insulator of BCB (benzocyclobutene) has a field-effect mobility of 0.4 cm/sup 2//Vs and a threshold voltage of 0.7 V. The leakage currents through the gate insulator of an a-Si:H TFT with an organic gate insulator is about two orders of magnitude lower than that of an a-Si:H TFT with a SiN/sub x/ gate insulator.