Secondary Electron Yield Measurements of Carbon Nanotube Forests: Dependence on Morphology and Substrate

• Published in: IEEE transactions on plasma science Vol. 47; no. 8; pp. 3801 - 3809
• Main Authors: Wood, Brian, Lee, Jordan, Wilson, Greg, Shen, T.-C., Dennison, J. R.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-08-2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum; Atomic properties; Backscatter electron yield; Backscattering; Beams (radiation); Carbon; carbon nanotube (CNT) forests; Carbon nanotubes; Chemical vapor deposition; chemical vapor deposition (CVD); Constituents; Density; Dependence; Diffusion barriers; electron emission; Electrons; Forestry; High aspect ratio; Morphology; Optical variables measurement; Organic chemistry; Porosity; Rough surfaces; secondary electron yield (SEY); Silicon substrates; Substrates; Surface morphology; Surface roughness; Surface treatment; Yield
• ISSN: 0093-3813; 1939-9375
• DOI: 10.1109/TPS.2019.2921505

Total, secondary, and backscatter electron yield data were taken with beam energies between 15 eV and 30 keV, in conjunction with energy emission data, to determine the extent of suppression of yield caused by carbon nanotube (CNT) forest coatings on substrates. CNT forests can potentially lower substrate yield due to both its inherently low-yield, low-atomic number (Z) carbon composition, and its bundled, high-aspect-ratio structure. Rough surfaces, and in particular, surfaces with deep high-aspect-ratio voids, can suppress yields, as the electrons emitted from lower lying surfaces are recaptured by surface protrusions rather than escaping the near-surface region. Yields of multilayered materials can be modeled essentially serially as a combination of the constituents. However, it is shown that suppression of yields due to CNT forest morphology is more significant than simple predicted contributions of homogeneous layered components. This effect is found to be most pronounced at low energies, where the incident electrons interact preferentially with the CNTs. CNT forests between 20 and <inline-formula> <tex-math notation="LaTeX">50~\mu \text{m} </tex-math></inline-formula> tall were grown on a thick silicon substrate capped with a 3-nm diffusion barrier of evaporated aluminum using a wet injection chemical vapor deposition (CVD) method. Yields of an annealed substrate and constituent bulk materials were also investigated. At incident electron energies above ~1200 eV, the substrate secondary yield dominated those of the CNT forests, as incident electrons penetrated through the low-density, low-Z CNT forests, and backscattered from the higher-Z substrate. At lower energies <1200 eV, the CNT forests substantially reduced the overall yields of the substrate, and for <500-eV, CNT forest yields were <1, well below the already low yields of bulk graphite. This suppressed yield at low energies is attributed to the porosity and preferred vertical alignment of the CNT forest. The yield's dependence on the height and density of the CNT forest is also discussed.