Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

• Published in: IEEE electron device letters Vol. 24; no. 7; pp. 427 - 429
• Main Authors: Hafez, W., Jie-Wei Lai, Feng, M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-07-2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Circuits; Devices; Emitters (electron); Extrapolation; Heterojunction bipolar transistors; High speed; High speed integrated circuits; Radio frequencies; Radio frequency; Scanning electron microscopy; Semiconductor devices; Silicon germanium; Thermal management; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2003.814008

Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm×2 μm devices yielded excellent low-current RF performance, with an f T =173 GHz and an f max =187 GHz at 1 mA, the highest values reported for InP-based devices to date.