Second harmonic generation near 4 μm in p-type asymmetric GaAs/AlGaAs/AlAs quantum wells

• Published in: Solid state communications Vol. 93; no. 11; pp. 903 - 907
• Main Authors: Xu, Z., Fauchet, P.M., Rella, C.W., Richman, B.A., Schwettman, H.A., Wicks, G.W.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-03-1995; Elsevier
• Subjects: A. quantum wells; Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. optical properties; E. nonlinear optics; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; E. nonlinear optics; A. quantum wells; D. optical properties; Aluminium arsenides; Harmonics; Gallium arsenides; Semiconductor materials; Free electron lasers; Quantum wells; Non linear optical susceptibility; Experimental study; III-V compound; Lasers; Optical properties; P-type conductors; Resonance; Nonlinear optics
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(94)00822-1

We report second harmonic generation measurements in
p-type GaAs/Al
0.5Ga
0.5As/AlAs stepped quantum wells using a free electron laser tunable from 3 to 6 μm. The peak enhancement of the second order susceptibility in singly resonant quantum wells over that of bulk GaAs is nearly one order of magnitude. The dominant contribution is from the term related to
X
xyz
(2) and
X
zxy
(2), which is in contrast to
n-type quantum wells, where
X
zzz
(2) dominates. The enhancement peaks at 3.9 μm, which is attributed to a single resonance corresponding to the SO-HH1 transition.