Radiation effects in nitrided oxides

Electron radiation effects on silicon dioxide films, before and after ammonia annealing (nitridation), have been studied. The most striking result is that the generation of radiation-induced interface states is nearly eliminated in the nitrided oxides.

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 4; no. 6; pp. 191 - 193
Main Authors:	Terry, F.L., Aucoin, R.J., Naiman, M.L., Senturia, S.D.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-06-1983 Institute of Electrical and Electronics Engineers
Subjects:	Annealing Applied sciences Capacitors Electronics Electrons Exact sciences and technology Interface states Miscellaneous Packaging Pollution measurement Radiation effects Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon compounds Testing Voltage Irradiation Oxides Interface electron state Electrons
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Description
Summary:	Electron radiation effects on silicon dioxide films, before and after ammonia annealing (nitridation), have been studied. The most striking result is that the generation of radiation-induced interface states is nearly eliminated in the nitrided oxides.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1983.25700