Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectr...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale advances Vol. 5; no. 5; pp. 1316 - 1322
Main Authors: Jin, Taewon, Kim, Sanghyeon, Han, Jae-Hoon, Ahn, Dae-Hwan, An, Seong Ui, Noh, Tae Hyeon, Sun, Xinkai, Kim, Cheol Jun, Park, Juhyuk, Kim, Younghyun
Format: Journal Article
Language:English
Published: England RSC 28-02-2023
Subjects:
Chemistry
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
AbstractList We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO 2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT. We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO 2 into the gate stack of the TFT.
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO 2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
Author Kim, Younghyun
Noh, Tae Hyeon
Kim, Cheol Jun
An, Seong Ui
Kim, Sanghyeon
Ahn, Dae-Hwan
Sun, Xinkai
Jin, Taewon
Han, Jae-Hoon
Park, Juhyuk
Author_xml – sequence: 1
  givenname: Taewon
  orcidid: 0000-0003-4613-0516
  surname: Jin
  fullname: Jin, Taewon
  email: younghyunkim@hanyang.ac.kr
  organization: Department of Photonics and Nanoelectronics, BK 21 FOUR ERICA-ACE Center, Hanyang University Ansan 15588 Korea younghyunkim@hanyang.ac.kr
– sequence: 2
  givenname: Sanghyeon
  orcidid: 0000-0002-2517-4408
  surname: Kim
  fullname: Kim, Sanghyeon
  organization: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Korea
– sequence: 3
  givenname: Jae-Hoon
  surname: Han
  fullname: Han, Jae-Hoon
  organization: Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST) Seoul 02792 Korea
– sequence: 4
  givenname: Dae-Hwan
  surname: Ahn
  fullname: Ahn, Dae-Hwan
  organization: Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST) Seoul 02792 Korea
– sequence: 5
  givenname: Seong Ui
  orcidid: 0000-0002-3521-3351
  surname: An
  fullname: An, Seong Ui
  email: younghyunkim@hanyang.ac.kr
  organization: Department of Photonics and Nanoelectronics, BK 21 FOUR ERICA-ACE Center, Hanyang University Ansan 15588 Korea younghyunkim@hanyang.ac.kr
– sequence: 6
  givenname: Tae Hyeon
  surname: Noh
  fullname: Noh, Tae Hyeon
  email: younghyunkim@hanyang.ac.kr
  organization: Department of Photonics and Nanoelectronics, BK 21 FOUR ERICA-ACE Center, Hanyang University Ansan 15588 Korea younghyunkim@hanyang.ac.kr
– sequence: 7
  givenname: Xinkai
  surname: Sun
  fullname: Sun, Xinkai
  email: younghyunkim@hanyang.ac.kr
  organization: Department of Photonics and Nanoelectronics, BK 21 FOUR ERICA-ACE Center, Hanyang University Ansan 15588 Korea younghyunkim@hanyang.ac.kr
– sequence: 8
  givenname: Cheol Jun
  surname: Kim
  fullname: Kim, Cheol Jun
  organization: Department of Applied Physics, Center for Bionano Intelligence Education and Research, Hanyang University Ansan 15588 Korea
– sequence: 9
  givenname: Juhyuk
  surname: Park
  fullname: Park, Juhyuk
  organization: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Korea
– sequence: 10
  givenname: Younghyun
  surname: Kim
  fullname: Kim, Younghyun
  email: younghyunkim@hanyang.ac.kr
  organization: Department of Photonics and Nanoelectronics, BK 21 FOUR ERICA-ACE Center, Hanyang University Ansan 15588 Korea younghyunkim@hanyang.ac.kr
BackLink https://www.ncbi.nlm.nih.gov/pubmed/36866266$$D View this record in MEDLINE/PubMed
BookMark eNpVUctOGzEUtRAV7w0fUHlZIQ31YzJjb5BQAgUpLZuwYWN57OvE1YwdbIcq_XqG8hBd3cc5OvdxDtFuiAEQOqXknBIuv1sWNCEt5XYHHbAJbSrCONn9lO-jk5x_E0IYreu6lXtonzeiaVjTHKC_MxhiyCXp4mPA0eF1isukh0F3PeDeL1cF-1AgZF-2L7jGgzcpVvOrGf7jy2ps3Liq0xksdpBShB5MSd7g28XDHV5cL7CLCf_cJF25BICtz-teb_Mx-uJ0n-HkLR6h--urxfSmmt_9uJ1ezivDW1EqK01LqHPGik4z04GwGriQ3YQCmzjXGiH4WNNaOGMcqaXhjZPEcmcEaQk_QhevuutNN4A1EMZre7VOftBpq6L26n8k-JVaxiclZctEQ0eBb28CKT5uIBc1-Gyg73WAuMmKtYLXsiYTMVLPXqnjh3JO4D7GUKJe_FIz9uvyn1-zkfz182If1Hd3-DOtoZRr
CitedBy_id crossref_primary_10_1021_acsami_3c16427
crossref_primary_10_1109_TED_2023_3327975
crossref_primary_10_1063_5_0177550
Cites_doi 10.1039/D1NR01535D
10.1002/adfm.201300372
10.35848/1882-0786/ab9a92
10.1063/1.1542677
10.1109/MSPEC.2007.4337663
10.1063/1.3634052
10.1109/TED.2019.2930749
10.1109/81.933328
10.1109/LED.2019.2950916
10.1002/pssr.202100086
10.1109/JSSC.2017.2693228
10.1109/TED.2006.890365
10.1016/j.actamat.2006.09.048
10.1088/1361-6463/abcfe4
10.1021/nl302049k
10.1038/nmat1485
10.1889/1.2785252
10.1889/1.3069851
10.1109/TED.2022.3154687
10.1039/C9NR07365E
10.1063/1.100704
10.1109/TED.2002.803626
10.1126/science.1083212
10.5573/JSTS.2014.14.5.594
10.1002/aelm.202100082
10.1007/s11837-018-3140-5
10.1063/1.1695437
10.1109/JDT.2014.2332643
10.1016/0022-3697(96)00019-4
10.1002/adfm.201101073
10.1186/s11671-022-03669-5
10.1063/1.4798265
10.1149/2.0081505jss
10.1889/1.2785232
10.1109/LED.2017.2698083
10.1889/1.2785567
10.1149/1.1740785
10.1016/0038-1101(66)90010-4
10.1002/pssa.201900840
10.1038/nature03090
10.1063/5.0064700
10.1109/LED.2018.2846570
10.1063/1.4966219
10.1116/1.2917075
10.1016/j.mee.2019.111013
10.1002/adma.201404531
ContentType Journal Article
Copyright This journal is © The Royal Society of Chemistry.
This journal is © The Royal Society of Chemistry 2023 RSC
Copyright_xml – notice: This journal is © The Royal Society of Chemistry.
– notice: This journal is © The Royal Society of Chemistry 2023 RSC
DBID NPM
AAYXX
CITATION
7X8
5PM
DOI 10.1039/d2na00713d
DatabaseName PubMed
CrossRef
MEDLINE - Academic
PubMed Central (Full Participant titles)
DatabaseTitle PubMed
CrossRef
MEDLINE - Academic
DatabaseTitleList MEDLINE - Academic

PubMed
CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Chemistry
EISSN 2516-0230
EndPage 1322
ExternalDocumentID 10_1039_D2NA00713D
36866266
Genre Journal Article
GrantInformation_xml – fundername: ;
  grantid: HY-2022-2566
GroupedDBID AAFWJ
ADBBV
ALMA_UNASSIGNED_HOLDINGS
ANUXI
BCNDV
C6K
EBS
GROUPED_DOAJ
H13
M~E
NPM
OK1
RPM
SMJ
AAYXX
CITATION
7X8
5PM
AFPKN
ID FETCH-LOGICAL-c378t-d9c701ffcd8ba2cbe8dae389b51e25ff7c883389148fccf049c36f90d3fc80703
IEDL.DBID RPM
ISSN 2516-0230
IngestDate Tue Sep 17 21:32:02 EDT 2024
Sat Oct 26 03:57:42 EDT 2024
Thu Nov 21 21:31:47 EST 2024
Sat Nov 02 12:27:02 EDT 2024
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 5
Language English
License This journal is © The Royal Society of Chemistry.
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c378t-d9c701ffcd8ba2cbe8dae389b51e25ff7c883389148fccf049c36f90d3fc80703
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Both authors equally contributed to this work.
ORCID 0000-0002-2517-4408
0000-0002-3521-3351
0000-0003-4613-0516
OpenAccessLink https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9972861/
PMID 36866266
PQID 2783494058
PQPubID 23479
PageCount 7
ParticipantIDs pubmedcentral_primary_oai_pubmedcentral_nih_gov_9972861
proquest_miscellaneous_2783494058
crossref_primary_10_1039_D2NA00713D
pubmed_primary_36866266
PublicationCentury 2000
PublicationDate 2023-02-28
PublicationDateYYYYMMDD 2023-02-28
PublicationDate_xml – month: 02
  year: 2023
  text: 2023-02-28
  day: 28
PublicationDecade 2020
PublicationPlace England
PublicationPlace_xml – name: England
PublicationTitle Nanoscale advances
PublicationTitleAlternate Nanoscale Adv
PublicationYear 2023
Publisher RSC
Publisher_xml – name: RSC
References Hwang (D2NA00713D/cit30/1) 2013; 23
Lederer (D2NA00713D/cit45/1) 2021; 15
Hoffman (D2NA00713D/cit8/1) 2003; 82
Kwon (D2NA00713D/cit7/1) 2004; 84
Powell (D2NA00713D/cit3/1) 1989; 54
Lehninger (D2NA00713D/cit42/1) 2020; 217
Hong (D2NA00713D/cit15/1) 2007; 38
Kim (D2NA00713D/cit12/1) 2014; 10
Filanovsky (D2NA00713D/cit17/1) 2001; 48
Kuk (D2NA00713D/cit37/1) 2022; 69
Müller (D2NA00713D/cit21/1) 2012; 12
Oh (D2NA00713D/cit31/1) 2017; 38
Lim (D2NA00713D/cit6/1) 2008; 26
Kim (D2NA00713D/cit26/1) 2019; 71
Bohr (D2NA00713D/cit27/1) 2007; 44
Lue (D2NA00713D/cit40/1) 2002; 49
Park (D2NA00713D/cit41/1) 2013; 102
Cao (D2NA00713D/cit47/1) 2018; 39
Lehninger (D2NA00713D/cit32/1) 2021
Onaya (D2NA00713D/cit43/1) 2019; 215
Mo (D2NA00713D/cit51/1) 2020; 13
Böscke (D2NA00713D/cit22/1) 2011; 99
Park (D2NA00713D/cit24/1) 2015; 27
Urabe (D2NA00713D/cit4/1) 2007; 38
Pinnow (D2NA00713D/cit19/1) 2004; 151
Kim (D2NA00713D/cit44/1) 2021; 13
Park (D2NA00713D/cit50/1) 2022; 17
Piquero-Zulaica (D2NA00713D/cit1/1) 2019; 11
Zuleeg (D2NA00713D/cit18/1) 1966; 9
Luo (D2NA00713D/cit16/1) 2017; 52
Han (D2NA00713D/cit36/1) 2021
Ali (D2NA00713D/cit28/1) 2019
Lee (D2NA00713D/cit11/1) 2014; 14
Müller (D2NA00713D/cit25/1) 2015; 4
Zarubin (D2NA00713D/cit20/1) 2016; 109
Matsueda (D2NA00713D/cit13/1) 2008; 39
Ono (D2NA00713D/cit10/1) 2007; 54
Wang (D2NA00713D/cit39/1) 2019; 40
Chen (D2NA00713D/cit2/1) 2021; 54
Li (D2NA00713D/cit35/1) 2005; 4
Mulaosmanovic (D2NA00713D/cit48/1) 2019; 66
Choudhury (D2NA00713D/cit34/1) 2007; 55
Cao (D2NA00713D/cit33/1) 1996; 57
Nomura (D2NA00713D/cit5/1) 2004; 432
Müller (D2NA00713D/cit23/1) 2013
Nomura (D2NA00713D/cit9/1) 2003; 300
Kuk (D2NA00713D/cit49/1) 2021
Park (D2NA00713D/cit46/1) 2011; 21
Tsujimura (D2NA00713D/cit14/1) 2007; 38
Mulaosmanovic (D2NA00713D/cit29/1) 2015
Liu (D2NA00713D/cit38/1) 2021; 119
References_xml – volume: 13
  start-page: 8524
  year: 2021
  ident: D2NA00713D/cit44/1
  publication-title: Nanoscale
  doi: 10.1039/D1NR01535D
  contributor:
    fullname: Kim
– volume: 23
  start-page: 5484
  issue: 44
  year: 2013
  ident: D2NA00713D/cit30/1
  publication-title: Adv. Funct. Mater.
  doi: 10.1002/adfm.201300372
  contributor:
    fullname: Hwang
– volume: 13
  start-page: 074005
  year: 2020
  ident: D2NA00713D/cit51/1
  publication-title: Appl. Phys. Express
  doi: 10.35848/1882-0786/ab9a92
  contributor:
    fullname: Mo
– volume: 82
  start-page: 733
  issue: 5
  year: 2003
  ident: D2NA00713D/cit8/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1542677
  contributor:
    fullname: Hoffman
– volume: 44
  start-page: 29
  year: 2007
  ident: D2NA00713D/cit27/1
  publication-title: IEEE Spectrum
  doi: 10.1109/MSPEC.2007.4337663
  contributor:
    fullname: Bohr
– volume: 99
  start-page: 102903
  issue: 10
  year: 2011
  ident: D2NA00713D/cit22/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3634052
  contributor:
    fullname: Böscke
– volume: 66
  start-page: 3828
  issue: 9
  year: 2019
  ident: D2NA00713D/cit48/1
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2019.2930749
  contributor:
    fullname: Mulaosmanovic
– volume: 48
  start-page: 876
  issue: 7
  year: 2001
  ident: D2NA00713D/cit17/1
  publication-title: IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
  doi: 10.1109/81.933328
  contributor:
    fullname: Filanovsky
– volume: 40
  start-page: 1937
  issue: 12
  year: 2019
  ident: D2NA00713D/cit39/1
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/LED.2019.2950916
  contributor:
    fullname: Wang
– volume: 15
  start-page: 2100086
  year: 2021
  ident: D2NA00713D/cit45/1
  publication-title: Phys. Status Solidi RRL
  doi: 10.1002/pssr.202100086
  contributor:
    fullname: Lederer
– volume: 52
  start-page: 2208
  issue: 8
  year: 2017
  ident: D2NA00713D/cit16/1
  publication-title: IEEE J. Solid-State Circuits
  doi: 10.1109/JSSC.2017.2693228
  contributor:
    fullname: Luo
– volume: 54
  start-page: 462
  issue: 3
  year: 2007
  ident: D2NA00713D/cit10/1
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2006.890365
  contributor:
    fullname: Ono
– volume: 55
  start-page: 1415
  issue: 4
  year: 2007
  ident: D2NA00713D/cit34/1
  publication-title: Acta Mater.
  doi: 10.1016/j.actamat.2006.09.048
  contributor:
    fullname: Choudhury
– start-page: 2
  year: 2019
  ident: D2NA00713D/cit28/1
  publication-title: Tech. Dig. - Int. Electron Devices Meet.
  contributor:
    fullname: Ali
– volume: 54
  start-page: 123001
  issue: 12
  year: 2021
  ident: D2NA00713D/cit2/1
  publication-title: J. Phys. D: Appl. Phys.
  doi: 10.1088/1361-6463/abcfe4
  contributor:
    fullname: Chen
– volume: 12
  start-page: 4318
  year: 2012
  ident: D2NA00713D/cit21/1
  publication-title: Nano Lett.
  doi: 10.1021/nl302049k
  contributor:
    fullname: Müller
– volume: 4
  start-page: 776
  issue: 10
  year: 2005
  ident: D2NA00713D/cit35/1
  publication-title: Nat. Mater.
  doi: 10.1038/nmat1485
  contributor:
    fullname: Li
– volume: 38
  start-page: 161
  issue: 1
  year: 2007
  ident: D2NA00713D/cit4/1
  publication-title: SID Symposium Digest of Technical Papers
  doi: 10.1889/1.2785252
  contributor:
    fullname: Urabe
– volume: 39
  start-page: 9
  issue: 1
  year: 2008
  ident: D2NA00713D/cit13/1
  publication-title: SID Symposium Digest of Technical Papers
  doi: 10.1889/1.3069851
  contributor:
    fullname: Matsueda
– volume: 69
  start-page: 2080
  issue: 4
  year: 2022
  ident: D2NA00713D/cit37/1
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2022.3154687
  contributor:
    fullname: Kuk
– start-page: 1
  volume-title: Optical Fiber Communications Conference and Exhibition
  year: 2021
  ident: D2NA00713D/cit36/1
  contributor:
    fullname: Han
– volume: 11
  start-page: 23132
  issue: 48
  year: 2019
  ident: D2NA00713D/cit1/1
  publication-title: Nanoscale
  doi: 10.1039/C9NR07365E
  contributor:
    fullname: Piquero-Zulaica
– volume: 54
  start-page: 1323
  issue: 14
  year: 1989
  ident: D2NA00713D/cit3/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.100704
  contributor:
    fullname: Powell
– volume: 49
  start-page: 1790
  issue: 10
  year: 2002
  ident: D2NA00713D/cit40/1
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2002.803626
  contributor:
    fullname: Lue
– volume: 300
  start-page: 1269
  issue: 5623
  year: 2003
  ident: D2NA00713D/cit9/1
  publication-title: Science
  doi: 10.1126/science.1083212
  contributor:
    fullname: Nomura
– volume: 14
  start-page: 594
  issue: 5
  year: 2014
  ident: D2NA00713D/cit11/1
  publication-title: J. Semicond. Technol. Sci.
  doi: 10.5573/JSTS.2014.14.5.594
  contributor:
    fullname: Lee
– start-page: 2100082
  year: 2021
  ident: D2NA00713D/cit32/1
  publication-title: Adv. Electron. Mater.
  doi: 10.1002/aelm.202100082
  contributor:
    fullname: Lehninger
– start-page: 10.8.1
  year: 2013
  ident: D2NA00713D/cit23/1
  publication-title: IEEE Int. Electron Devices Meet.
  contributor:
    fullname: Müller
– volume: 71
  start-page: 246
  year: 2019
  ident: D2NA00713D/cit26/1
  publication-title: JOM
  doi: 10.1007/s11837-018-3140-5
  contributor:
    fullname: Kim
– volume: 84
  start-page: 2685
  issue: 14
  year: 2004
  ident: D2NA00713D/cit7/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1695437
  contributor:
    fullname: Kwon
– volume: 10
  start-page: 995
  issue: 12
  year: 2014
  ident: D2NA00713D/cit12/1
  publication-title: J. Disp. Technol.
  doi: 10.1109/JDT.2014.2332643
  contributor:
    fullname: Kim
– volume: 57
  start-page: 1499
  issue: 10
  year: 1996
  ident: D2NA00713D/cit33/1
  publication-title: J. Phys. Chem. Solids
  doi: 10.1016/0022-3697(96)00019-4
  contributor:
    fullname: Cao
– volume: 21
  start-page: 4305
  year: 2011
  ident: D2NA00713D/cit46/1
  publication-title: Adv. Funct. Mater.
  doi: 10.1002/adfm.201101073
  contributor:
    fullname: Park
– volume: 17
  start-page: 29
  year: 2022
  ident: D2NA00713D/cit50/1
  publication-title: Nanoscale Res. Lett.
  doi: 10.1186/s11671-022-03669-5
  contributor:
    fullname: Park
– volume: 102
  start-page: 112914
  year: 2013
  ident: D2NA00713D/cit41/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4798265
  contributor:
    fullname: Park
– volume: 4
  start-page: N30
  year: 2015
  ident: D2NA00713D/cit25/1
  publication-title: ECS J. Solid State Sci. Technol.
  doi: 10.1149/2.0081505jss
  contributor:
    fullname: Müller
– start-page: 26.8.1
  year: 2015
  ident: D2NA00713D/cit29/1
  publication-title: Tech. Dig. - Int. Electron Devices Meet.
  contributor:
    fullname: Mulaosmanovic
– volume: 38
  start-page: 84
  issue: 1
  year: 2007
  ident: D2NA00713D/cit14/1
  publication-title: SID Symposium Digest of Technical Papers
  doi: 10.1889/1.2785232
  contributor:
    fullname: Tsujimura
– volume: 38
  start-page: 732
  issue: 6
  year: 2017
  ident: D2NA00713D/cit31/1
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/LED.2017.2698083
  contributor:
    fullname: Oh
– volume: 38
  start-page: 1366
  issue: 1
  year: 2007
  ident: D2NA00713D/cit15/1
  publication-title: SID Symposium Digest of Technical Papers
  doi: 10.1889/1.2785567
  contributor:
    fullname: Hong
– volume: 151
  start-page: K13
  issue: 6
  year: 2004
  ident: D2NA00713D/cit19/1
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.1740785
  contributor:
    fullname: Pinnow
– volume: 9
  start-page: 657
  year: 1966
  ident: D2NA00713D/cit18/1
  publication-title: Solid-State Electron.
  doi: 10.1016/0038-1101(66)90010-4
  contributor:
    fullname: Zuleeg
– volume: 217
  start-page: 1900840
  year: 2020
  ident: D2NA00713D/cit42/1
  publication-title: Phys. Status Solidi A
  doi: 10.1002/pssa.201900840
  contributor:
    fullname: Lehninger
– volume: 432
  start-page: 488
  year: 2004
  ident: D2NA00713D/cit5/1
  publication-title: Nature
  doi: 10.1038/nature03090
  contributor:
    fullname: Nomura
– start-page: 33.6.1
  year: 2021
  ident: D2NA00713D/cit49/1
  publication-title: IEEE Int. Electron Devices Meet.
  contributor:
    fullname: Kuk
– volume: 119
  start-page: 172902
  year: 2021
  ident: D2NA00713D/cit38/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/5.0064700
  contributor:
    fullname: Liu
– volume: 39
  start-page: 1207
  issue: 8
  year: 2018
  ident: D2NA00713D/cit47/1
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/LED.2018.2846570
  contributor:
    fullname: Cao
– volume: 109
  start-page: 192903
  year: 2016
  ident: D2NA00713D/cit20/1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4966219
  contributor:
    fullname: Zarubin
– volume: 26
  start-page: 959
  issue: 3
  year: 2008
  ident: D2NA00713D/cit6/1
  publication-title: J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.
  doi: 10.1116/1.2917075
  contributor:
    fullname: Lim
– volume: 215
  start-page: 111013
  year: 2019
  ident: D2NA00713D/cit43/1
  publication-title: Microelectron. Eng.
  doi: 10.1016/j.mee.2019.111013
  contributor:
    fullname: Onaya
– volume: 27
  start-page: 1811
  year: 2015
  ident: D2NA00713D/cit24/1
  publication-title: Adv. Mater.
  doi: 10.1002/adma.201404531
  contributor:
    fullname: Park
SSID ssj0002144479
Score 2.304811
Snippet We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a...
SourceID pubmedcentral
proquest
crossref
pubmed
SourceType Open Access Repository
Aggregation Database
Index Database
StartPage 1316
SubjectTerms Chemistry
Title Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays
URI https://www.ncbi.nlm.nih.gov/pubmed/36866266
https://www.proquest.com/docview/2783494058
https://pubmed.ncbi.nlm.nih.gov/PMC9972861
Volume 5
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Nb9swDCWaXrbLsO4zW1uo2K5qYjm25WMRJ8iAtR2wDBh2MWyJwgzETpCPQ_frS8px0bS3XS3LMESZfM96JAG-FuR3A1cqWWoTyVGsyA8ScJUBBiEGMaYK-Vf27Gdy81tnEy6TE3W5MF60b8rqslnUl03112srV7UZdDqxwY_rMSd76jgY9KBH2PARRWf3yzXARknalSIN04FVTeHZmD0MPs8Q5VNh5KNIM30Nr_YQUVy1r3ICR9i8gRfjrjPbW_iXYc2wrjWeWDqxV1nVnAclFsy3RdVq07d3PF6ImoV38vskE_znlS7MnOQIZoXD9XrZdsOpjPg2_3Mr5tO5IDAryAqFdGtEYavNalHcbd7Br-lkPp7JfQ8FacJEb6VNTTIMnDNWl4UyJWpbIIGUMgpQRc4lhrsN65RYkTPGEV8wYezSoQ2d0ewO3sNxs2zwIwilkDxjaSikuxFbgGZzYdEQh5GhT7sPX7rFzVdtqYzcH3GHaZ6pmytvgqwPF92657RsfDxRNLjcbXLf8yMlAKn78KG1w8NzwljHRL3iPiQHFnq4gatkH47Q5vHVsveb5dN_z_wML7nHfJvHfgrH2_UOz6C3sbtzz-DP_f67B0QJ4-E
link.rule.ids 230,315,729,782,786,866,887,27933,27934,53800,53802
linkProvider National Library of Medicine
linkToHtml http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lj5swEB51t4ftpe9H-nTVXr0BE8AcVyFRVs2mlUqlqhcE9lhFCiTK47D99Z2BsNq0t70yGCF_MP7G_mYG4HNBftd3pZKlNqEcRYr8IBFX6aMfoB9hopC3smff48VPnU64TE7Y58K0on1TVufNsj5vqt-ttnJdm2GvExt-uxpzsqeO_OEJ3Kf_1fNuBensgLkK2ChO-mKkQTK0qinaeMweLz__ccp_pZG31prpozu-5WN4eCCX4qIzP4F72DyFs3Hf0-0Z_EmxZkLYwS5WThz0WTVnUIklR-qi6lTtu2u2F6JmyZ6cT1LBe7Z0YeYkr31WONxsVl0fncqIy-zXV5FNM0E0WBB-hXQbRGGr7XpZXG-fw4_pJBvP5KH7gjRBrHfSJib2fOeM1WWhTInaFkj0pgx9VKFzseE-xTqheMoZ4yjSMEHkEs8Gzmh2JC_gtFk1-AqEUkg-tTREBtyIZ4VGc0nSAL3QkFMYwKcelHzdFdnI28PxIMlTtbhooUsH8LHHK6dp44ONosHVfpu33UISop56AC87_G6eE0Q6oqAtGkB8hOzNDVxf-9hCgLZ1tg8Avr7zyA9wNsuu5vn8cvHlDTzgTvVdNvxbON1t9vgOTrZ2_779ev8CmDf4fg
linkToPdf http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3LbtswEFwkKdD20vfDSZMyaK-MLMqWqGNg2XDQ1AlQFyh6ESRyiQqwZMOPQ_r13ZUsI25vzVUkBUEjLWfJ4Q7A54ziru9yJXNt-rIXKoqDRFylj36AfoixQl7KHn-LJj90MuQyOTurr1q0b_LiopqVF1Xxq9ZWLkrjtTox7_brgA976tD3FtZ5h_CI_tmuupeocxDmSmC9KG4LkgaxZ1WV1TmZ3Z-C_uGVf8sj7803o-cPeNIX8GxLMsVl0-UlHGD1Cp4MWm-31_A7wZKJYQO_mDux1WmVfJJKzDhjF0Wjbl_fcXsmSpbuyethInjtli6MneQ50AqHy-W88dMpjLia_rwR09FUEB0WhGMm3RJR2GK1mGV3qzfwfTScDsZy68IgTRDptbSxibq-c8bqPFMmR20zJJqT931Ufeciw37FOqa8yhnjKOMwQejirg2c0RxQ3sJRNa_wPQilkGJrbogUuB6_GRrNpUkD7PYNBYcOfGqBSRdNsY203iQP4jRRk8savqQD5y1mKb023uDIKpxvVmntGhITBdUdeNdguLtPEOqQkrewA9EeursOXGd7v4VArettb0E8_u-RH-HxbTJKr68mX07gKRvWN4fiP8DRernBUzhc2c1Z_QH_AV6D-v4
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Demonstration+of+programmable+light+intensity+of+a+micro-LED+with+a+Hf-based+ferroelectric+ITZO+TFT+for+Mura-free+displays&rft.jtitle=Nanoscale+advances&rft.au=Jin%2C+Taewon&rft.au=Kim%2C+Sanghyeon&rft.au=Han%2C+Jae-Hoon&rft.au=Ahn%2C+Dae-Hwan&rft.date=2023-02-28&rft.issn=2516-0230&rft.eissn=2516-0230&rft.volume=5&rft.issue=5&rft.spage=1316&rft_id=info:doi/10.1039%2Fd2na00713d&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2516-0230&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2516-0230&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2516-0230&client=summon