Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectr...

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Bibliographic Details
Published in:	Nanoscale advances Vol. 5; no. 5; pp. 1316 - 1322
Main Authors:	Jin, Taewon, Kim, Sanghyeon, Han, Jae-Hoon, Ahn, Dae-Hwan, An, Seong Ui, Noh, Tae Hyeon, Sun, Xinkai, Kim, Cheol Jun, Park, Juhyuk, Kim, Younghyun
Format:	Journal Article
Language:	English
Published:	England RSC 28-02-2023
Subjects:	Chemistry
Online Access:	Get full text
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Summary:	We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 Both authors equally contributed to this work.
ISSN:	2516-0230 2516-0230
DOI:	10.1039/d2na00713d