Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3

• Published in: Thin solid films Vol. 436; no. 2; pp. 145 - 156
• Main Authors: ELAM, J. W, SCHUISKY, M, FERGUSON, J. D, GEORGE, S. M
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier Science 31-07-2003
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Atomic layer method; Fourier transformation; Inorganic compounds; Transition element compounds; Surface chemistry; Crystal growth from vapors; Infrared spectra; Quartz crystal microbalance; Experimental study; Precursor; Gas mixtures; Titanium nitrides; Thin films; Nitrides; Ammonia; Atomic layer deposition; Titanium Organic compounds; Diffusion barriers; Fourier transform infrared techniques; Quartz microbalance
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/s0040-6090(03)00533-9

Surface chemistry and film growth were examined during TiN atomic layer deposition (ALD) using sequential exposures of tetrakis-dimethylamino titanium (TDMAT) and NH3. This ALD system is shown to be far from ideal and illustrates many potential problems that may affect ALD processing. These studies were performed using in situ FTIR techniques and quartz crystal microbalance (QCM) measurements. Ex situ measurements also analyzed the properties of the TiN ALD films. The FTIR studies revealed that TDMAT reacts with NHx* species on the TiN surface following NH3 exposures to deposit new Ti(N(CH3)2)x* species. Subsequent NH3 exposure consumes the dimethylamino species and regenerates the NHx* species. These observations are consistent with transamination exchange reactions during the TDMAT and NH3 exposures. QCM studies determined that the TDMAT and NH3 reactions are nearly self-limiting. However, slow continual growth occurs with long TDMAT exposures. The TiN ALD growth rate increases progressively with growth temperature. The resistivities of the TiN ALD films were greater than or equal to 104 mWcm and the densities were less than or equal to 3 g/cm3 corresponding to a porosity of 40%. The high porosity allows facile oxidation of the TiN films and lowers the film resistivities. These high film porosities will seriously impair the use of these TiN ALD films as diffusion barriers. 29 refs.