Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be suppressed by decreasing NH 3 flow rate in the gas phase. We can optimize the growth condition for AlGaN growth, thereby fabricating UV-LED w...

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Published in:Journal of crystal growth Vol. 237; pp. 951 - 955
Main Authors: Iwaya, Motoaki, Terao, Shinji, Sano, Tomoaki, Ukai, Tsutomu, Nakamura, Ryo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format: Journal Article
Language:English
Published: Elsevier B.V 01-04-2002
Subjects:
A1. LT-interlayer
A1. Phase separation
A1. Stresses
A3. NH 3 flow rate
B1. Nitrides
B3. Light emitting diodes
85.60.Jb
B3. Light emitting diodes
B1. Nitrides
A1. Stresses
A3. NH 3 flow rate
A1. Phase separation
A1. LT-interlayer
81.05.Ea
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Abstract Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be suppressed by decreasing NH 3 flow rate in the gas phase. We can optimize the growth condition for AlGaN growth, thereby fabricating UV-LED with an emission wavelength of 352 nm and output power of 0.6 mW at 50 mA.
AbstractList Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be suppressed by decreasing NH 3 flow rate in the gas phase. We can optimize the growth condition for AlGaN growth, thereby fabricating UV-LED with an emission wavelength of 352 nm and output power of 0.6 mW at 50 mA.
Author Kamiyama, Satoshi
Sano, Tomoaki
Ukai, Tsutomu
Iwaya, Motoaki
Terao, Shinji
Akasaki, Isamu
Amano, Hiroshi
Nakamura, Ryo
Author_xml – sequence: 1
  givenname: Motoaki
  surname: Iwaya
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  givenname: Shinji
  surname: Terao
  fullname: Terao, Shinji
  organization: Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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  givenname: Tomoaki
  surname: Sano
  fullname: Sano, Tomoaki
  organization: Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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  givenname: Tsutomu
  surname: Ukai
  fullname: Ukai, Tsutomu
  organization: Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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  givenname: Ryo
  surname: Nakamura
  fullname: Nakamura, Ryo
  organization: Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 6
  givenname: Satoshi
  surname: Kamiyama
  fullname: Kamiyama, Satoshi
  organization: Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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  givenname: Hiroshi
  surname: Amano
  fullname: Amano, Hiroshi
  organization: Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
– sequence: 8
  givenname: Isamu
  surname: Akasaki
  fullname: Akasaki, Isamu
  organization: Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Keywords 85.60.Jb
B3. Light emitting diodes
B1. Nitrides
A1. Stresses
A3. NH 3 flow rate
A1. Phase separation
A1. LT-interlayer
81.05.Ea
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Snippet Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be...
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SubjectTerms A1. LT-interlayer
A1. Phase separation
A1. Stresses
A3. NH 3 flow rate
B1. Nitrides
B3. Light emitting diodes
Title Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN
URI https://dx.doi.org/10.1016/S0022-0248(01)02011-5
Volume 237
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