Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be suppressed by decreasing NH 3 flow rate in the gas phase. We can optimize the growth condition for AlGaN growth, thereby fabricating UV-LED w...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 237; pp. 951 - 955
Main Authors:	Iwaya, Motoaki, Terao, Shinji, Sano, Tomoaki, Ukai, Tsutomu, Nakamura, Ryo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-04-2002
Subjects:	A1. LT-interlayer A1. Phase separation A1. Stresses A3. NH 3 flow rate B1. Nitrides B3. Light emitting diodes 85.60.Jb B3. Light emitting diodes B1. Nitrides A1. Stresses A3. NH 3 flow rate A1. Phase separation A1. LT-interlayer 81.05.Ea
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Summary:	Phase separation of AlGaN is found to occur during growth on periodically trenched GaN, and it sometimes causes crack formation. The rate of separation can be suppressed by decreasing NH 3 flow rate in the gas phase. We can optimize the growth condition for AlGaN growth, thereby fabricating UV-LED with an emission wavelength of 352 nm and output power of 0.6 mW at 50 mA.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(01)02011-5