ZnTe-Based Light-Emitting-Diodes Grown on ZnTe Substrates by Molecular Beam Epitaxy

• Published in: Physica status solidi. B. Basic research Vol. 229; no. 2; pp. 995 - 999
• Main Authors: Chang, J.H., Takai, T., Godo, K., Song, J.S., Koo, B.H., Hanada, T., Yao, T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01-01-2002; WILEY‐VCH Verlag Berlin GmbH; Wiley
• Subjects: 73.61.Ga; 81.05.Dz; 81.15.Hi; 85.60.Jb; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Ii-vi semiconductors; Light-emitting devices; Materials science; Materials synthesis; materials processing; Optoelectronic devices; Physics; S8.13; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Homoepitaxy; Quantum well; Binary compound; Semiconductor materials; Zinc tellurides; Charge carrier density; Doping; Aluminium; Electroluminescence; Epitaxial film; X ray diffraction; Inorganic compound; Light emitting diode; Transition metal compounds; Electroluminescent device; Molecular beam epitaxy
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(200201)229:2<995::AID-PSSB995>3.0.CO;2-G

We have investigated the ZnTe‐based material system for the application to light‐emitting devices. To this end, ZnTe homoepitaxy techniques have been developed to grow high‐quality epitaxial layers. The conductivity control of ZnTe and ZnMgSeTe layers have been investigated. High structural quality n‐type ZnTe layers with high carrier concentration are achieved by aluminum doping. Ambipolar conductivity control of quaternary layers is achieved. Aluminum doped ZnMgSeTe layers show a net carrier concentration of 5 × 1016 cm—3, while a high hole concentration of 2.5 × 1019 cm—3 is achieved by p‐type doping using a nitrogen plasma source. Based on those results, Zn1—xCdxTe/ZnMgSeTe triple‐quantum‐well(TQW) LED structures were fabricated. Bright electroluminescence was obtained at room temperature at the wavelength of 604 nm from Zn0.7Cd0.3Te and at 566 nm from Zn0.85Cd0.15Te TQW‐LED.