Negative Trion Binding Energy in Semiconductor Quantum Wells: Effects of Structural Confinement and Longitudinal Electric Field

• Published in: Physica status solidi. A, Applied research Vol. 190; no. 3; pp. 803 - 807
• Main Authors: Dacal, L.C.O., Brum, J.A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01-04-2002; WILEY‐VCH Verlag Berlin GmbH; Wiley-VCH
• Subjects: 73.20.Mf; 73.21.Fg; 78.67.De; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells; S7.12; Aluminium arsenides; Confinement; Gallium arsenides; Inorganic compounds; Semiconductor materials; Variational methods; Ternary compounds; Quantum wells; Binary compounds; Excitons; Electric field effects; Binding energy; Trion
• ISSN: 0031-8965; 1521-396X
• DOI: 10.1002/1521-396X(200204)190:3<803::AID-PSSA803>3.0.CO;2-R

We present variational calculations of the binding energy for negatively charged excitons in idealized GaAs/Al0.3Ga0.7As quantum wells using a physically clear basis set. The presence of a longitudinal electric field is considered and we show the importance of including more than one electron quantum well solution in the basis.