Electrical characterization of vertically stacked p-FET SOI nanowires

• Published in: Solid-state electronics Vol. 141; pp. 84 - 91
• Main Authors: Cardoso Paz, Bruna, Cassé, Mikaël, Barraud, Sylvain, Reimbold, Gilles, Vinet, Maud, Faynot, Olivier, Antonio Pavanello, Marcelo
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-03-2018; Elsevier
• Subjects: Channel orientation; Electrical characterization; Engineering Sciences; Micro and nanotechnologies; Microelectronics; SOI MOSFET; Transport; Vertically stacked nanowire; Electrical characterization; Performance; Transport; Vertically stacked nanowire; SOI MOSFET; Channel orientation; electrical characterization; vertically stacked nanowire; performance; transport; channel orientation
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2017.12.011

•New approaches and adapted methodologies to extract EOT and real fin width of NWs.•Validation of the extracted parameters by tridimensional numerical simulation.•Short channel effects and effective mobility extraction and evaluation of p-FET SOI stacked NWs.•Comparison between two different crystallographic orientations.•Excellent electrostatic control and reduced short channel effects down to L = 15 nm, for both orientations.•Improved ION/IOFF reducing WFIN is more correlated to subthreshold slope decrease than effective mobility increase.
This work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional procedure to extract the effective oxide thickness (EOT) and Shift and Ratio Method (S&R) have been adapted and validated through tridimensional numerical simulations. Electrical characterization is performed for NWs with [1 1 0]- and [1 0 0]-oriented channels, as a function of both fin width (WFIN) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15 nm gate length, for both orientations. Effective mobility is found around two times higher for [1 1 0]- in comparison to [1 0 0]-oriented NWs due to higher holes mobility contribution in (1 1 0) plan. Improvements obtained on ION/IOFF by reducing WFIN are mainly due to subthreshold slope decrease, once small and none mobility increase is obtained for [1 1 0]- and [1 0 0]-oriented NWs, respectively.