Nitrogen passivation by implantation-induced point defects in 4H–SiC epitaxial layers

• Published in: Applied surface science Vol. 184; no. 1; pp. 263 - 267
• Main Authors: Åberg, D., Hallén, A., Pellegrino, P., Svensson, B.G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 12-12-2001; Elsevier Science
• Subjects: 4H-SiC; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Ion implantation; Passivation; Physics; Point defects; silicon; Structure of solids and liquids; crystallography; vacancy; Ion implantation; Point defects; 4H–SiC; Passivation; Crystal defects; Inorganic compounds; Semiconductor thin films; Vacancy density; n-type conductors; Silicon carbides; Wide band gap semiconductors; Experimental study; Modified material
• ISSN: 0169-4332; 1873-5584; 1873-5584
• DOI: 10.1016/S0169-4332(01)00506-2

Ion implantation causes damage to the crystal lattice resulting in the loss of free charge carriers. In this study, low dose implantations using different ions and implantation doses are made to resolve the initial carrier loss in nitrogen-doped epitaxial layers. A strong dependence of compensation on nitrogen concentration is seen, showing that nitrogen is passivated by implantation-induced point defects. An activation energy of 3.2
eV for the dissociation of the passivated nitrogen center is obtained.