Resonant Tunneling Method for Measuring Fullerene Concentration in Organosilicon Composites

• Published in: Measurement techniques Vol. 59; no. 6; pp. 605 - 609
• Main Authors: Barshutina, M. N., Barshutin, S. N., Ushakov, A. V.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-09-2016; Springer; Springer Nature B.V
• Subjects: Analytical Chemistry; Characterization and Evaluation of Materials; Dielectric films; Dielectric properties; Electric properties; Electrodes; Emission analysis; Fullerenes; Hopping conduction; Investigations; Measurement; Measurement Science and Instrumentation; Measurement techniques; Methods; Nanocomposites; Nanometrology; Nanoparticles; Physical Chemistry; Physics; Physics and Astronomy; Polymers; Resonant tunneling; Silicon; Silicon compounds; Temperature; Thin films; Tunnels (transportation)
• ISSN: 0543-1972; 1573-8906
• DOI: 10.1007/s11018-016-1016-z

This purpose of this work is the evaluation the low-temperature resonant tunneling method for measuring the concentration of fullerenes in organosilicon composites. The study showed that the low-temperature resonant tunneling method gives highly accurate results due to the prevalence of tunnel-emission-type conductivity in organosilicon polymers at low temperatures around 77–180 K. The Poole–Frenkel hopping conduction and the Fowler–Nordheim tunnel emission models were used for analysis.