Structural and electronic properties of optimized a-Si:H films

Structural and electronic properties of optimized a-Si:H films

Intrinsic a-Si:H films grown using optimized larger hydrogen dilution conditions have been studied. Capacitance measurements show a decrease in defect density with increasing film thickness. For films with thickness of 1.3 μm transient photocapacitance data indicate electronic transitions due to mic...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids Vol. 266; pp. 253 - 257
Main Authors: Lubianiker, Yoram, Cohen, J.David, Lubarsky, G, Rosenwaks, Y, Yang, Jeffrey, Guha, Subhendu
Format: Journal Article
Language:English
Published: Elsevier B.V 01-05-2000
Subjects:
D100
M215
A245
S380
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Intrinsic a-Si:H films grown using optimized larger hydrogen dilution conditions have been studied. Capacitance measurements show a decrease in defect density with increasing film thickness. For films with thickness of 1.3 μm transient photocapacitance data indicate electronic transitions due to microcrystallites embedded in an amorphous matrix. Atomic force microscopy measurements enable us to identify crystallites at the film surface, while Kelvin probe force microscopy is used to measure their electronic properties. The correlation between the structural and electronic properties is discussed.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(99)00830-3