Statistical analysis of relationship between negative-bias temperature instability and random telegraph noise in small p-channel metal-oxide-semiconductor field-effect transistors

• Published in: Japanese Journal of Applied Physics Vol. 53; no. 3; pp. 34202 - 1-034202-5
• Main Authors: Tega, Naoki, Miki, Hiroshi, Mine, Toshiyuki, Ohmori, Kenji, Yamada, Keisaku
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01-03-2014
• Subjects: Field effect transistors; Instability; Niobium base alloys; Noise; Recovery; Semiconductor devices; Stability; Statistical analysis; Stresses
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.53.034202

It is demonstrated from a statistical perspective that the generation of random telegraph noise (RTN) changes before and after the application of negative-bias temperature instability (NBTI) stress. The NBTI stress generates a large number of permanent interface traps and, at the same time, a large number of RTN traps causing temporary RTN and one-time RTN. The interface trap and the RTN trap show different features in the recovery process. That is, a re-passivation of interface states is the minor cause of the recovery after the NBTI stress, and in contrast, rapid disappearance of the temporary RTN and the one-time RTN is the main cause of the recovery. The RTN traps are less likely to become permanent. This two-type trap, namely, the interface trap and RTN trap, model simply explains NBTI degradation and recovery in scaled p-channel metal-oxide-semiconductor field-effect transistors.