Electrical characterization of InGaN quantum well p–n heterostructures

• Published in: Microelectronics Vol. 34; no. 5-8; pp. 455 - 457
• Main Authors: González, J.C., da Silva, M.I.N., Bunker, K.L., Batchelor, A.D., Russell, P.E.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-05-2003
• Subjects: Electrical force microscopy; InGaN; p–n heterostructure; InGaN; Electrical force microscopy; p–n heterostructure
• ISSN: 1879-2391; 1879-2391
• DOI: 10.1016/S0026-2692(03)00072-7

In this work, two methods for electrical characterization of InGaN quantum well p–n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p–n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution.