Plasma Processing of Functional Thin Films by Sputtering Deposition Using Metal-Based Powder Target
Titanium-based functional thin films were prepared by a sputtering deposition method using a metal powder target, and the electron density and temperature of the processing plasma were investigated. The electron density of the plasma, measured by a probe method, when using a powder target was higher...
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Published in: | Japanese Journal of Applied Physics Vol. 52; no. 11; pp. 11NB07 - 11NB07-4 |
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Main Authors: | , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
The Japan Society of Applied Physics
01-11-2013
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Subjects: | |
Online Access: | Get full text |
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Summary: | Titanium-based functional thin films were prepared by a sputtering deposition method using a metal powder target, and the electron density and temperature of the processing plasma were investigated. The electron density of the plasma, measured by a probe method, when using a powder target was higher than that when using a bulk target. The deposition rate when using a powder target was also higher than that in the case of a bulk target. These results may be due to the net-cathode area of the powder target being larger than that of the bulk target. X-ray photoelectron spectroscopy, X-ray diffraction measurements, and atomic force microscopy images of the films prepared using the Ti powder target indicated nearly the same properties as those of films prepared using a Ti bulk target, and the prepared films are oxide. These results suggest that TiO 2 thin films can be prepared using a Ti powder target and that the quality is almost the same as those of films prepared using a Ti bulk target. |
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Bibliography: | (Color online) Experimental apparatus. Dependence of electron density and temperature of processing plasma on RF power measured by Langmuir probe method. Distributions of electron temperature and electron density 5 mm above the substrate. Emission spectrum of the RF plasma with powder target. Dependence of the peak emission intensity of Ti I (337 nm), calculated from emission spectra. Dependence of deposition rate of the TiO 2 films on RF power using Ti bulk and powder targets. (Color online) Difference in the sputtering deposition mechanism using (a) powder and (b) bulk targets. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.52.11NB07 |