Electronic and magnetic properties of 3d transition-metal-doped GaAs

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 10; no. 1; pp. 143 - 147
• Main Author: Shirai, Masafumi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-2001
• Subjects: Diluted magnetic semiconductors; Electronic band-structure calculation; Ferromagnetic materials; Ferromagnetic materials; Diluted magnetic semiconductors; 71.20; 75.50.P; Electronic band-structure calculation
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/S1386-9477(01)00070-4

Electronic band-structure calculations are carried out for the hypothetical zinc-blende phase of 3d transition-metal monoarsenides as well as periodic supercells of 3d transition-metal-doped GaAs by using the full-potential linearized augmented-plane-wave method. The antiferromagnetic state is stable for zinc-blende FeAs, while the ferromagnetic state is stable for zinc-blende VAs, CrAs, and MnAs. It is expected that (Ga,Cr)As becomes ferromagnetic due to the presence of mobile valence-band carriers (holes), since the electronic band-structure in the ferromagnetic state of (Ga,Cr)As is very similar to that of (Ga,Mn)As.