Dilute nitride absorbers in passive devices for mode locking of solid-state lasers
We report on the growth, material and nonlinear optical properties of GaInNAs quantum wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for passive mode locking of solid-state lasers in the telecommunication wavelength range from 1.3 to 1.55 μm. The antiresonant SESAMs were grown...
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Published in: | Journal of crystal growth Vol. 278; no. 1; pp. 239 - 243 |
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Main Authors: | , , , , , , |
Format: | Journal Article Conference Proceeding |
Language: | English |
Published: |
Amsterdam
Elsevier B.V
01-05-2005
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | We report on the growth, material and nonlinear optical properties of GaInNAs quantum wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for passive mode locking of solid-state lasers in the telecommunication wavelength range from 1.3 to 1.55
μm. The antiresonant SESAMs were grown by molecular beam epitaxy with a nitrogen concentration of 1.6% and 2.6%, respectively. They were subject to rapid thermal annealing to fine-tune the absorption wavelength by blueshifting the photoluminescence wavelength. The appearance of QW intermixing upon thermal annealing was studied by X-ray rocking curve measurements. The thermal annealing procedure was proved not to alter the GaInNAs SESAM by QW intermixing for temperatures up to 800
°C. Optical characterization was applied to investigate the nonlinear SESAM properties. Degenerate pump-probe experiments revealed similar recovery times for both SESAMs in the tens of picoseconds range. We demonstrated stable self-starting passive cw mode locking with sub-10
ps pulses at 1314 and 1534
nm. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2004.12.069 |