Dilute nitride absorbers in passive devices for mode locking of solid-state lasers

We report on the growth, material and nonlinear optical properties of GaInNAs quantum wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for passive mode locking of solid-state lasers in the telecommunication wavelength range from 1.3 to 1.55 μm. The antiresonant SESAMs were grown...

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Bibliographic Details
Published in:Journal of crystal growth Vol. 278; no. 1; pp. 239 - 243
Main Authors: Schön, S., Rutz, A., Liverini, V., Grange, R., Haiml, M., Zeller, S.C., Keller, U.
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 01-05-2005
Elsevier
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Summary:We report on the growth, material and nonlinear optical properties of GaInNAs quantum wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for passive mode locking of solid-state lasers in the telecommunication wavelength range from 1.3 to 1.55 μm. The antiresonant SESAMs were grown by molecular beam epitaxy with a nitrogen concentration of 1.6% and 2.6%, respectively. They were subject to rapid thermal annealing to fine-tune the absorption wavelength by blueshifting the photoluminescence wavelength. The appearance of QW intermixing upon thermal annealing was studied by X-ray rocking curve measurements. The thermal annealing procedure was proved not to alter the GaInNAs SESAM by QW intermixing for temperatures up to 800 °C. Optical characterization was applied to investigate the nonlinear SESAM properties. Degenerate pump-probe experiments revealed similar recovery times for both SESAMs in the tens of picoseconds range. We demonstrated stable self-starting passive cw mode locking with sub-10 ps pulses at 1314 and 1534 nm.
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.069